STW68N60M6
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STMicroelectronics STW68N60M6

Manufacturer No:
STW68N60M6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW68N60M6 is a high-performance N-channel power MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh™ M6 technology. This device is part of the well-established MDmesh family of Super Junction (SJ) MOSFETs, which has been enhanced with the latest advancements. The STW68N60M6 is designed to offer excellent on-resistance (RDS(on)) per area, reduced switching losses, and improved switching behavior, making it highly efficient for various power applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 35 mΩ (typ.), 41 mΩ (max.) mΩ
ID (Drain Current) 63 A (continuous at TC = 25 °C), 40 A (continuous at TC = 100 °C) A
IDM (Drain Current Pulsed) 252 A A
PTOT (Total Power Dissipation at TC = 25 °C) 390 W W
VGS (Gate-Source Voltage) ±25 V V
Tstg (Storage Temperature Range) -55 to 150 °C °C
Rthj-case (Thermal Resistance Junction-Case) 0.32 °C/W °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 50 °C/W °C/W

Key Features

  • Reduced switching losses
  • Lower RDS(on) per area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications
  • LLC converters
  • Boost PFC converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW68N60M6?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STW68N60M6?

    The typical on-resistance (RDS(on)) is 35 mΩ.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 63 A.

  4. What is the thermal resistance junction-case (Rthj-case) of the STW68N60M6?

    The thermal resistance junction-case (Rthj-case) is 0.32 °C/W.

  5. Is the STW68N60M6 100% avalanche tested?

    Yes, the STW68N60M6 is 100% avalanche tested.

  6. What are the typical applications of the STW68N60M6?

    The typical applications include switching applications, LLC converters, and Boost PFC converters.

  7. What is the package type of the STW68N60M6?

    The package type is TO-247.

  8. Is the STW68N60M6 RoHS compliant?

    Yes, the STW68N60M6 is RoHS compliant.

  9. What is the storage temperature range for the STW68N60M6?

    The storage temperature range is -55 to 150 °C.

  10. What is the maximum gate-source voltage (VGS) for the STW68N60M6?

    The maximum gate-source voltage (VGS) is ±25 V.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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$11.64
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Similar Products

Part Number STW68N60M6 STWA68N60M6 STW48N60M6
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc) 63A (Tc) 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs - 41mOhm @ 31.5A, 10V 69mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id - 4.75V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 106 nC @ 10 V 57 nC @ 10 V
Vgs (Max) - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds - 4360 pF @ 100 V 2578 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) - 390W (Tc) 250W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247 Long Leads TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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