Overview
The STW48N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its strip layout and improved vertical structure, which result in low on-resistance and optimized switching characteristics. These features make the STW48N60M2 highly suitable for demanding high-efficiency converters, particularly in applications requiring high performance and reliability.
Key Specifications
Parameter | Value | Unit |
---|---|---|
VDS (Maximum Drain-Source Voltage) | 650 | V |
VGS (Maximum Gate-Source Voltage) | ±25 | V |
ID (Maximum Drain Current at TC = 25°C) | 42 | A |
ID (Maximum Drain Current at TC = 100°C) | 26 | A |
RDS(on) (Maximum Drain-Source On-State Resistance) | 70 mΩ | mΩ |
PTOT (Total Power Dissipation at TC = 25°C) | 300 | W |
Tj (Operating Junction Temperature Range) | -55 to 150 | °C |
Qg (Total Gate Charge) | 70 nC | nC |
Coss (Output Capacitance) | 143 pF | pF |
Rthj-case (Thermal Resistance Junction-Case) | 0.42 °C/W | °C/W |
Key Features
- Extremely Low Gate Charge: Minimizes switching losses and enhances overall efficiency.
- Excellent Output Capacitance (Coss) Profile: Optimized for high-frequency applications.
- 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
- Zener-Protected: Provides additional protection against voltage spikes.
- Optimized Switching Characteristics: Suitable for high-efficiency converters due to its low on-resistance and improved vertical structure.
Applications
The STW48N60M2 is suitable for switching applications, including power supplies, motor control, industrial automation, and renewable energy systems.
Q & A
- What is the maximum drain-source voltage of the STW48N60M2?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance of the STW48N60M2?
The typical on-resistance (RDS(on)) is 60 mΩ.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is 42 A.
- What is the total gate charge of the STW48N60M2?
The total gate charge (Qg) is 70 nC.
- What is the package type of the STW48N60M2?
The package type is TO-247.
- What are the key features of the STW48N60M2?
The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.
- What is the operating junction temperature range of the STW48N60M2?
The operating junction temperature range (Tj) is -55 to 150°C.
- What is the thermal resistance junction-case of the STW48N60M2?
The thermal resistance junction-case (Rthj-case) is 0.42 °C/W.
- What applications is the STW48N60M2 suitable for?
The STW48N60M2 is suitable for switching applications, including power supplies, motor control, industrial automation, and renewable energy systems.
- What technology is used in the STW48N60M2?
The STW48N60M2 is developed using MDmesh M2 technology.