STWA48N60M2
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STMicroelectronics STWA48N60M2

Manufacturer No:
STWA48N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 42A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW48N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its strip layout and improved vertical structure, which result in low on-resistance and optimized switching characteristics. These features make the STW48N60M2 highly suitable for demanding high-efficiency converters, particularly in applications requiring high performance and reliability.

Key Specifications

ParameterValueUnit
VDS (Maximum Drain-Source Voltage)650V
VGS (Maximum Gate-Source Voltage)±25V
ID (Maximum Drain Current at TC = 25°C)42A
ID (Maximum Drain Current at TC = 100°C)26A
RDS(on) (Maximum Drain-Source On-State Resistance)70 mΩ
PTOT (Total Power Dissipation at TC = 25°C)300W
Tj (Operating Junction Temperature Range)-55 to 150°C
Qg (Total Gate Charge)70 nCnC
Coss (Output Capacitance)143 pFpF
Rthj-case (Thermal Resistance Junction-Case)0.42 °C/W°C/W

Key Features

  • Extremely Low Gate Charge: Minimizes switching losses and enhances overall efficiency.
  • Excellent Output Capacitance (Coss) Profile: Optimized for high-frequency applications.
  • 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
  • Zener-Protected: Provides additional protection against voltage spikes.
  • Optimized Switching Characteristics: Suitable for high-efficiency converters due to its low on-resistance and improved vertical structure.

Applications

The STW48N60M2 is suitable for switching applications, including power supplies, motor control, industrial automation, and renewable energy systems.

Q & A

  1. What is the maximum drain-source voltage of the STW48N60M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STW48N60M2?

    The typical on-resistance (RDS(on)) is 60 mΩ.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 42 A.

  4. What is the total gate charge of the STW48N60M2?

    The total gate charge (Qg) is 70 nC.

  5. What is the package type of the STW48N60M2?

    The package type is TO-247.

  6. What are the key features of the STW48N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  7. What is the operating junction temperature range of the STW48N60M2?

    The operating junction temperature range (Tj) is -55 to 150°C.

  8. What is the thermal resistance junction-case of the STW48N60M2?

    The thermal resistance junction-case (Rthj-case) is 0.42 °C/W.

  9. What applications is the STW48N60M2 suitable for?

    The STW48N60M2 is suitable for switching applications, including power supplies, motor control, industrial automation, and renewable energy systems.

  10. What technology is used in the STW48N60M2?

    The STW48N60M2 is developed using MDmesh M2 technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 Long Leads
Package / Case:TO-247-3
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Similar Products

Part Number STWA48N60M2 STWA48N60M6 STW48N60M2 STWA48N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 39A (Tc) 42A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 21A, 10V 69mOhm @ 19.5A, 10V 70mOhm @ 21A, 10V 79mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 57 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3060 pF @ 100 V 2578 pF @ 100 V 3060 pF @ 100 V 3250 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 300W (Tc) 250W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 Long Leads TO-247 Long Leads TO-247-3 TO-247 Long Leads
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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