STW48N60DM2
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STMicroelectronics STW48N60DM2

Manufacturer No:
STW48N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 40A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW48N60DM2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. It is part of the MDmesh DM2 series, known for its fast recovery diode characteristics. This MOSFET is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications. The device is packaged in a TO-247 package, which provides good thermal dissipation and mechanical robustness.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
On-Resistance (Rds(on))0.065 Ω (typ.)
Drain Current (Id)40 A
PackageTO-247
Recovery Charge (Qrr)Very low
Recovery Time (trr)Very low

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.065 Ω, which minimizes power losses and enhances efficiency.
  • High drain current of 40 A, allowing for high current handling.
  • Fast recovery diode with very low recovery charge (Qrr) and recovery time (trr), improving switching performance.
  • TO-247 package for good thermal dissipation and mechanical robustness.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Industrial power management systems.
  • Automotive and aerospace power systems where high reliability and performance are required.

Q & A

  1. What is the voltage rating of the STW48N60DM2 MOSFET?
    The voltage rating of the STW48N60DM2 MOSFET is 600 V.
  2. What is the typical on-resistance of the STW48N60DM2?
    The typical on-resistance (Rds(on)) is 0.065 Ω.
  3. What is the maximum drain current of the STW48N60DM2?
    The maximum drain current (Id) is 40 A.
  4. In what package is the STW48N60DM2 available?
    The STW48N60DM2 is available in a TO-247 package.
  5. What are the key benefits of the MDmesh DM2 series?
    The MDmesh DM2 series offers very low recovery charge (Qrr) and recovery time (trr), making it ideal for high-frequency switching applications.
  6. What types of applications is the STW48N60DM2 suitable for?
    The STW48N60DM2 is suitable for power supplies, motor control, high-frequency switching, industrial power management, and automotive/aerospace power systems.
  7. How does the TO-247 package benefit the STW48N60DM2?
    The TO-247 package provides good thermal dissipation and mechanical robustness, which are crucial for high-power applications.
  8. What is the significance of low recovery charge and time in the STW48N60DM2?
    Low recovery charge and time improve the switching performance and efficiency of the MOSFET, reducing losses and heat generation.
  9. Can the STW48N60DM2 be used in automotive applications?
    Yes, the STW48N60DM2 can be used in automotive applications due to its high reliability and performance.
  10. Where can I find detailed specifications for the STW48N60DM2?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through authorized distributors like Digi-Key, Mouser, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:79mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3250 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW48N60DM2 STW48N60M2 STWA48N60DM2 STW28N60DM2 STW43N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 42A (Tc) 40A (Tc) 21A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 79mOhm @ 20A, 10V 70mOhm @ 21A, 10V 79mOhm @ 20A, 10V 160mOhm @ 10.5A, 10V 93mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V 34 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 100 V 3060 pF @ 100 V 3250 pF @ 100 V 1500 pF @ 100 V 2500 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc) 170W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247 Long Leads TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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