Overview
The STW43N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed for high-efficiency converters and is particularly suited for bridge topologies and ZVS phase-shift converters. It features very low recovery charge (Qrr) and time (trr), combined with low on-resistance (RDS(on)), making it ideal for demanding applications.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-source voltage | 650 | V |
| VGS | Gate-source voltage | ±25 | V |
| ID | Drain current (continuous) at Tcase = 25 °C | 34 | A |
| ID | Drain current (continuous) at Tcase = 100 °C | 21 | A |
| IDM | Drain current (pulsed) | 136 | A |
| PTOT | Total dissipation at Tcase = 25 °C | 250 | W |
| RDS(on) | Static drain-source on-resistance | 0.085 (typ.), 0.093 (max.) | Ω |
| Tstg | Storage temperature | -55 to 150 | °C |
| Tj | Operating junction temperature | - | °C |
| dv/dt | MOSFET dv/dt ruggedness | 50 | V/ns |
| Rthj-case | Thermal resistance junction-case | 0.50 | °C/W |
| Rthj-amb | Thermal resistance junction-ambient | 50 | °C/W |
Key Features
- Fast-recovery body diode with very low recovery charge (Qrr) and time (trr)
- Extremely low gate charge and input capacitance
- Low on-resistance (RDS(on))
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected gate
Applications
- Switching applications
- High-efficiency converters
- Bridge topologies
- ZVS phase-shift converters
Q & A
- What is the maximum drain-source voltage of the STW43N60DM2?
The maximum drain-source voltage is 650 V.
- What is the continuous drain current at Tcase = 25 °C?
The continuous drain current at Tcase = 25 °C is 34 A.
- What is the typical on-resistance (RDS(on)) of the STW43N60DM2?
The typical on-resistance (RDS(on)) is 0.085 Ω.
- What are the key features of the STW43N60DM2's body diode?
The body diode features fast recovery with very low recovery charge (Qrr) and time (trr).
- What is the maximum storage temperature for the STW43N60DM2?
The maximum storage temperature is 150 °C.
- What is the thermal resistance junction-case (Rthj-case) of the STW43N60DM2?
The thermal resistance junction-case (Rthj-case) is 0.50 °C/W.
- What are some typical applications of the STW43N60DM2?
Typical applications include switching applications, high-efficiency converters, bridge topologies, and ZVS phase-shift converters.
- What is the maximum dv/dt ruggedness of the STW43N60DM2?
The maximum dv/dt ruggedness is 50 V/ns.
- Is the STW43N60DM2 100% avalanche tested?
Yes, the STW43N60DM2 is 100% avalanche tested.
- What package type is the STW43N60DM2 available in?
The STW43N60DM2 is available in a TO-247 package.
