STW33N60DM2
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STMicroelectronics STW33N60DM2

Manufacturer No:
STW33N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 24A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW33N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh DM2 fast recovery diode series. This device is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-efficiency applications. It is available in D²PAK, TO-220, and TO-247 packages, catering to various design requirements.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (Drain-Source On-Resistance)0.110 Ω (typ.)
ID (Drain Current)24 A
Ptot (Total Power Dissipation)Varies by package (refer to datasheet)
TJ (Junction Temperature)-40°C to 150°C
PackageD²PAK, TO-220, TO-247

Key Features

  • Low recovery charge (Qrr) and time (trr) for high efficiency
  • High voltage rating of 600 V
  • Low on-resistance (RDS(on)) of 0.110 Ω (typ.)
  • High drain current capability of 24 A
  • Avaliable in D²PAK, TO-220, and TO-247 packages for flexibility in design

Applications

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control and drives
  • Power factor correction (PFC) circuits
  • High-power industrial and automotive applications

Q & A

  1. What is the maximum drain-source voltage of the STW33N60DM2?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STW33N60DM2?
    The typical on-resistance is 0.110 Ω.
  3. What is the maximum drain current of the STW33N60DM2?
    The maximum drain current is 24 A.
  4. In which packages is the STW33N60DM2 available?
    The STW33N60DM2 is available in D²PAK, TO-220, and TO-247 packages.
  5. What are the key features of the STW33N60DM2?
    The key features include low recovery charge and time, high voltage rating, low on-resistance, and high drain current capability.
  6. What are some common applications of the STW33N60DM2?
    Common applications include switch-mode power supplies, DC-DC converters, motor control and drives, power factor correction circuits, and high-power industrial and automotive applications.
  7. What is the junction temperature range of the STW33N60DM2?
    The junction temperature range is -40°C to 150°C.
  8. Why is the STW33N60DM2 part of the MDmesh DM2 series important?
    It is part of the MDmesh DM2 series, which is known for its fast recovery diode characteristics, making it suitable for high-efficiency applications.
  9. Where can I find detailed specifications for the STW33N60DM2?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors like Digi-Key and Mouser.
  10. Is the STW33N60DM2 suitable for automotive applications?
    Yes, it can be used in high-power automotive applications due to its robust specifications and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1870 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STB33N60DM2
STB33N60DM2
MOSFET N-CH 600V 24A D2PAK
STP33N60DM2
STP33N60DM2
MOSFET N-CH 600V 24A TO220

Similar Products

Part Number STW33N60DM2 STW35N60DM2 STW43N60DM2 STW33N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 28A (Tc) 34A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 12A, 10V 110mOhm @ 14A, 10V 93mOhm @ 17A, 10V 125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 54 nC @ 10 V 56 nC @ 10 V 45.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 100 V 2400 pF @ 100 V 2500 pF @ 100 V 1781 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 190W (Tc) 210W (Tc) 250W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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