Overview
The STW35N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed for high-efficiency converters and is particularly suitable for bridge topologies and ZVS phase-shift converters. It features very low recovery charge (Qrr) and time (trr), combined with low on-resistance (RDS(on)), making it ideal for demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 0.094 (typ.), 0.11 (max.) | Ω |
| ID (Drain Current, continuous at Tcase = 25 °C) | 28 | A |
| ID (Drain Current, continuous at Tcase = 100 °C) | 17 | A |
| IDM (Drain Current, pulsed) | 112 | A |
| PTOT (Total Dissipation at Tcase = 25 °C) | 210 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| Tstg (Storage Temperature) | -55 to 150 | °C |
| Tj (Operating Junction Temperature) | - | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 0.6 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 50 | °C/W |
Key Features
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance (RDS(on))
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected gate-source for enhanced ESD performance
Applications
The STW35N60DM2 is ideal for various high-efficiency switching applications, including:
- Bridge topologies
- ZVS phase-shift converters
- Other demanding high-efficiency converters
Q & A
- What is the maximum drain-source voltage (VDS) of the STW35N60DM2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STW35N60DM2?
The typical on-resistance (RDS(on)) is 0.094 Ω.
- What is the maximum continuous drain current (ID) at Tcase = 25 °C?
The maximum continuous drain current (ID) at Tcase = 25 °C is 28 A.
- What is the total dissipation (PTOT) at Tcase = 25 °C?
The total dissipation (PTOT) at Tcase = 25 °C is 210 W.
- What is the storage temperature range for the STW35N60DM2?
The storage temperature range is -55 to 150 °C.
- What are the key features of the STW35N60DM2?
The key features include a fast-recovery body diode, extremely low gate charge and input capacitance, low on-resistance, 100% avalanche tested, high dv/dt ruggedness, and Zener-protected gate-source.
- What are the typical applications of the STW35N60DM2?
The typical applications include bridge topologies, ZVS phase-shift converters, and other high-efficiency converters.
- What is the thermal resistance junction-case (Rthj-case) of the STW35N60DM2?
The thermal resistance junction-case (Rthj-case) is 0.6 °C/W.
- Is the STW35N60DM2 Zener-protected?
- What package type is the STW35N60DM2 available in?
The STW35N60DM2 is available in the TO-247 package.
