STW35N60DM2
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STMicroelectronics STW35N60DM2

Manufacturer No:
STW35N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 28A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW35N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed for high-efficiency converters and is particularly suitable for bridge topologies and ZVS phase-shift converters. It features very low recovery charge (Qrr) and time (trr), combined with low on-resistance (RDS(on)), making it ideal for demanding applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.094 (typ.), 0.11 (max.) Ω
ID (Drain Current, continuous at Tcase = 25 °C) 28 A
ID (Drain Current, continuous at Tcase = 100 °C) 17 A
IDM (Drain Current, pulsed) 112 A
PTOT (Total Dissipation at Tcase = 25 °C) 210 W
VGS (Gate-Source Voltage) ±25 V
Tstg (Storage Temperature) -55 to 150 °C
Tj (Operating Junction Temperature) - °C
Rthj-case (Thermal Resistance Junction-Case) 0.6 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 50 °C/W

Key Features

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance (RDS(on))
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected gate-source for enhanced ESD performance

Applications

The STW35N60DM2 is ideal for various high-efficiency switching applications, including:

  • Bridge topologies
  • ZVS phase-shift converters
  • Other demanding high-efficiency converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW35N60DM2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STW35N60DM2?

    The typical on-resistance (RDS(on)) is 0.094 Ω.

  3. What is the maximum continuous drain current (ID) at Tcase = 25 °C?

    The maximum continuous drain current (ID) at Tcase = 25 °C is 28 A.

  4. What is the total dissipation (PTOT) at Tcase = 25 °C?

    The total dissipation (PTOT) at Tcase = 25 °C is 210 W.

  5. What is the storage temperature range for the STW35N60DM2?

    The storage temperature range is -55 to 150 °C.

  6. What are the key features of the STW35N60DM2?

    The key features include a fast-recovery body diode, extremely low gate charge and input capacitance, low on-resistance, 100% avalanche tested, high dv/dt ruggedness, and Zener-protected gate-source.

  7. What are the typical applications of the STW35N60DM2?

    The typical applications include bridge topologies, ZVS phase-shift converters, and other high-efficiency converters.

  8. What is the thermal resistance junction-case (Rthj-case) of the STW35N60DM2?

    The thermal resistance junction-case (Rthj-case) is 0.6 °C/W.

  9. Is the STW35N60DM2 Zener-protected?
  10. What package type is the STW35N60DM2 available in?

    The STW35N60DM2 is available in the TO-247 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW35N60DM2 STW35N65DM2 STW33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 32A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V 110mOhm @ 16A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 56.3 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V 2540 pF @ 100 V 1870 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 210W (Tc) 250W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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