Overview
The STW33N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. The STW33N60M2 features a strip layout and an improved vertical structure, which contribute to its low on-resistance and optimized switching characteristics. These enhancements make it particularly suitable for demanding high-efficiency converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 0.108 (typ.), 0.125 (max.) | Ω |
| ID (Drain Current, continuous) at TC = 25 °C | 26 | A |
| ID (Drain Current, continuous) at TC = 100 °C | 16 | A |
| IDM (Drain Current, pulsed) | 104 | A |
| PTOT (Total Power Dissipation) at TC = 25 °C | 190 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| Tj (Operating Junction Temperature Range) | -50 to 150 | °C |
| Tstg (Storage Temperature Range) | -50 to 150 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 0.66 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 50 | °C/W |
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Low on-resistance and optimized switching characteristics
- High efficiency and reliability in power management applications
- Available in TO-247 package
Applications
- Switching applications
- LLC converters
- Resonant converters
- High-efficiency power converters
Q & A
- What is the maximum drain-source voltage (VDS) of the STW33N60M2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical static drain-source on-resistance (RDS(on)) of the STW33N60M2?
The typical static drain-source on-resistance (RDS(on)) is 0.108 Ω.
- What is the continuous drain current (ID) at TC = 25 °C for the STW33N60M2?
The continuous drain current (ID) at TC = 25 °C is 26 A.
- What is the total power dissipation (PTOT) at TC = 25 °C for the STW33N60M2?
The total power dissipation (PTOT) at TC = 25 °C is 190 W.
- What is the operating junction temperature range (Tj) for the STW33N60M2?
The operating junction temperature range (Tj) is -50 to 150 °C.
- What are the key features of the STW33N60M2?
The key features include extremely low gate charge, excellent output capacitance (COSS) profile, 100% avalanche tested, and Zener-protected.
- In which package is the STW33N60M2 available?
The STW33N60M2 is available in the TO-247 package.
- What are some typical applications of the STW33N60M2?
Typical applications include switching applications, LLC converters, resonant converters, and high-efficiency power converters.
- What technology is used in the STW33N60M2?
The STW33N60M2 is developed using the MDmesh M2 technology.
- What is the thermal resistance junction-case (Rthj-case) for the STW33N60M2?
The thermal resistance junction-case (Rthj-case) is 0.66 °C/W.
