Overview
The STP33N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications such as high-efficiency converters. The STP33N60M2 is available in the TO-220 package and features a vertical structure combined with a strip layout, which enhances its switching characteristics and reduces gate charge.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS @ TJmax | 650 | V |
| RDS(on) max. | 0.125 | Ω |
| ID (continuous) at TC = 25 °C | 26 | A |
| ID (continuous) at TC = 100 °C | 16 | A |
| IDM (pulsed) | 104 | A |
| PTOT Total power dissipation at TC = 25 °C | 190 | W |
| VGS Gate-source voltage | ±25 | V |
| V(BR)DSS Drain-source breakdown voltage | 600 | V |
| Rthj-case Thermal resistance junction-case | 3.6 | °C/W |
| Rthj-amb Thermal resistance junction-ambient | 62.5 | °C/W |
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Low RDS(on) x area compared to previous generations
- MDmesh M2 technology for improved vertical structure and strip layout
- Low gate input resistance
Applications
- Switching applications
- LLC converters
- Resonant converters
- High-efficiency converters
Q & A
- What is the maximum drain-source breakdown voltage of the STP33N60M2?
The maximum drain-source breakdown voltage is 600 V.
- What is the typical on-resistance of the STP33N60M2?
The typical on-resistance is 0.108 Ω.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 26 A.
- What is the thermal resistance junction-case for the TO-220 package?
The thermal resistance junction-case is 3.6 °C/W.
- Is the STP33N60M2 100% avalanche tested?
- What are the typical applications of the STP33N60M2?
The typical applications include switching applications, LLC converters, and resonant converters.
- What technology is used in the STP33N60M2?
The STP33N60M2 uses the MDmesh M2 technology.
- What is the maximum gate-source voltage?
The maximum gate-source voltage is ±25 V.
- What is the forward on voltage of the source-drain diode?
The forward on voltage of the source-drain diode is approximately 1.6 V.
- What is the reverse recovery time of the source-drain diode?
The reverse recovery time of the source-drain diode is approximately 375 ns.
