Overview
The STP33N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh DM2 fast recovery diode series. This device is designed for high-efficiency converters and is particularly suited for demanding applications such as bridge topologies and ZVS phase-shift converters. It is available in D²PAK, TO-220, and TO-247 packages, offering flexibility in design and implementation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS @ TJmax. | 650 | V |
| RDS(on) max. | 130 mΩ | mΩ |
| ID (continuous) at Tcase = 25 °C | 24 | A |
| ID (continuous) at Tcase = 100 °C | 15.5 | A |
| IDM (pulsed) | 96 | A |
| PTOT at Tcase = 25 °C | 190 | W |
| VGS (static) | ±25 | V |
| VGS (dynamic AC, f > 1 Hz) | ±30 | V |
| Tstg | -55 to 150 | °C |
| Tj | -55 to 150 | °C |
Key Features
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance (RDS(on))
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
The STP33N60DM2 is ideal for various high-efficiency switching applications, including bridge topologies and ZVS phase-shift converters. Its low recovery charge and time, combined with low RDS(on), make it suitable for demanding converter designs.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP33N60DM2?
The maximum drain-source voltage (VDS) is 650 V. - What is the maximum continuous drain current (ID) at Tcase = 25 °C?
The maximum continuous drain current (ID) at Tcase = 25 °C is 24 A. - What are the available package types for the STP33N60DM2?
The STP33N60DM2 is available in D²PAK, TO-220, and TO-247 packages. - What is the typical on-resistance (RDS(on)) of the STP33N60DM2?
The typical on-resistance (RDS(on)) is 110 mΩ. - Is the STP33N60DM2 100% avalanche tested?
Yes, the STP33N60DM2 is 100% avalanche tested. - What is the peak diode recovery voltage slope (dv/dt) of the STP33N60DM2?
The peak diode recovery voltage slope (dv/dt) is 100 V/ns. - What is the storage temperature range (Tstg) of the STP33N60DM2?
The storage temperature range (Tstg) is -55 to 150 °C. - What are the typical applications of the STP33N60DM2?
The STP33N60DM2 is typically used in high-efficiency switching applications, including bridge topologies and ZVS phase-shift converters. - Does the STP33N60DM2 have Zener protection?
Yes, the STP33N60DM2 is Zener-protected. - What is the total gate charge (Qg) of the STP33N60DM2?
The total gate charge (Qg) is 43 nC at VDD = 480 V, ID = 24 A, and VGS = 10 V.
