Overview
The STP43N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed for high-efficiency converters and is particularly suitable for demanding applications such as bridge topologies and ZVS phase-shift converters. It features a low on-resistance, extremely low gate charge, and high dv/dt ruggedness, making it an ideal choice for various power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at Tcase = 25°C | 34 | A |
| Pulsed Drain Current (IDM) | 136 | A |
| Total Dissipation (PTOT) at Tcase = 25°C | 250 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.085 (typ.) | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 0.50 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Package | TO-220 |
Key Features
- Fast-recovery body diode with low recovery charge (Qrr) and time (trr)
- Extremely low gate charge and input capacitance
- Low on-resistance (RDS(on))
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected gate
Applications
- Switching applications
- High-efficiency converters
- Bridge topologies
- ZVS phase-shift converters
Q & A
- What is the maximum drain-source breakdown voltage of the STP43N60DM2?
The maximum drain-source breakdown voltage is 600 V. - What is the typical on-resistance of the STP43N60DM2?
The typical on-resistance is 0.085 Ω. - What is the maximum continuous drain current at Tcase = 25°C?
The maximum continuous drain current is 34 A. - What is the total dissipation at Tcase = 25°C?
The total dissipation is 250 W. - What package type is the STP43N60DM2 available in?
The STP43N60DM2 is available in a TO-220 package. - What are the key features of the STP43N60DM2?
The key features include a fast-recovery body diode, extremely low gate charge, low on-resistance, 100% avalanche tested, high dv/dt ruggedness, and Zener-protected gate. - What are the typical applications of the STP43N60DM2?
The typical applications include switching applications, high-efficiency converters, bridge topologies, and ZVS phase-shift converters. - What is the thermal resistance junction-case of the STP43N60DM2?
The thermal resistance junction-case is 0.50 °C/W. - What is the maximum storage temperature for the STP43N60DM2?
The maximum storage temperature is 150 °C. - What is the peak diode recovery voltage slope of the STP43N60DM2?
The peak diode recovery voltage slope is 50 V/ns.
