STP35N60DM2
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STMicroelectronics STP35N60DM2

Manufacturer No:
STP35N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 28A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP35N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-efficiency applications. The STP35N60DM2 is characterized by its high voltage rating and low on-resistance, which are critical for minimizing power losses and enhancing overall system performance.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 0.094 Ohm (typ.)
ID (Drain Current) 28 A
Ptot (Total Power Dissipation) Varies by package, typically up to 200 W for TO-247 package
TJ (Junction Temperature) -40°C to 150°C
Package TO-247, TO-220FP, D2PAK
Qrr (Recovery Charge) Very low
trr (Recovery Time) Very low

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (RDS(on)) of 0.094 Ohm, which minimizes power losses.
  • High drain current (ID) of 28 A, supporting high current requirements.
  • Very low recovery charge (Qrr) and recovery time (trr), enhancing efficiency in switching applications.
  • Available in various packages including TO-247, TO-220FP, and D2PAK, offering flexibility in design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Industrial and automotive power systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STP35N60DM2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STP35N60DM2?

    The typical on-resistance (RDS(on)) is 0.094 Ohm.

  3. What is the maximum drain current of the STP35N60DM2?

    The maximum drain current (ID) is 28 A.

  4. What are the key benefits of the low recovery charge and time in the STP35N60DM2?

    The low recovery charge (Qrr) and time (trr) enhance the efficiency and reduce power losses in high-frequency switching applications.

  5. In which packages is the STP35N60DM2 available?

    The STP35N60DM2 is available in TO-247, TO-220FP, and D2PAK packages.

  6. What are some common applications for the STP35N60DM2?

    Common applications include power supplies, motor control systems, high-frequency switching applications, industrial and automotive power systems, and renewable energy systems.

  7. What is the junction temperature range for the STP35N60DM2?

    The junction temperature range is -40°C to 150°C.

  8. How does the MDmesh™ DM2 technology benefit the STP35N60DM2?

    The MDmesh™ DM2 technology provides very low recovery charge and time, which is crucial for high-efficiency and high-frequency applications.

  9. Is the STP35N60DM2 suitable for automotive applications?

    Yes, it is suitable for automotive applications due to its high reliability and robustness.

  10. What is the total power dissipation for the STP35N60DM2?

    The total power dissipation varies by package but can be up to 200 W for the TO-247 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP35N60DM2 STP35N65DM2 STP33N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 32A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V 110mOhm @ 16A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 56.3 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V 2540 pF @ 100 V 1870 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 210W (Tc) 250W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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