Overview
The STI33N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh II Plus™ low Qg technology. This device is designed to offer exceptional efficiency and reliability in high-power applications. It features a vertical structure combined with a strip layout, resulting in one of the world's lowest on-resistance and gate charge values. This makes it particularly suitable for demanding high-efficiency converters.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | - | - | - | 600 | V |
| VBR(DSS) (Drain-Source Breakdown Voltage) | ID = 1 mA, VGS = 0 | - | - | 600 | V |
| ID (Continuous Drain Current) | - | - | - | 26 | A |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 10 V, ID = 13 A | - | 0.108 | 0.125 | Ω |
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID = 250 µA | 2 | 3 | 4 | V |
| Qg (Gate Charge) | VDD = 480 V, ID = 26 A | - | - | - | nC |
Key Features
- Extremely low gate charge (Qg) using MDmesh II Plus™ technology
- Lower RDS(on) x area compared to previous generations
- MDmesh™ II technology for enhanced performance
- Low gate input resistance
- 100% avalanche tested for reliability
- Zener-protected for added safety
Applications
- Switching applications
- LCC (Load Commutated Converter) and resonant converters
- High-efficiency power converters requiring low on-resistance and gate charge
Q & A
- What is the maximum drain-source voltage (VDS) of the STI33N60M2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STI33N60M2?
The typical on-resistance (RDS(on)) is 0.108 Ω.
- What is the continuous drain current (ID) rating of the STI33N60M2?
The continuous drain current (ID) rating is 26 A.
- What technology is used in the STI33N60M2?
The STI33N60M2 uses the MDmesh II Plus™ low Qg technology.
- What are the typical applications of the STI33N60M2?
Typical applications include switching applications, LCC converters, and resonant converters.
- What is the gate threshold voltage (VGS(th)) of the STI33N60M2?
The gate threshold voltage (VGS(th)) is between 2 V and 4 V.
- Is the STI33N60M2 100% avalanche tested?
Yes, the STI33N60M2 is 100% avalanche tested.
- What package types are available for the STI33N60M2?
The STI33N60M2 is available in the I2PAK package.
- What is the forward on voltage (VSD) of the source-drain diode?
The forward on voltage (VSD) is approximately 1.6 V.
- What is the reverse recovery time (trr) of the source-drain diode?
The reverse recovery time (trr) is approximately 375 ns.
