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STI33N60M2
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STMicroelectronics STI33N60M2

Manufacturer No:
STI33N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 26A I2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STI33N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh II Plus™ low Qg technology. This device is designed to offer exceptional efficiency and reliability in high-power applications. It features a vertical structure combined with a strip layout, resulting in one of the world's lowest on-resistance and gate charge values. This makes it particularly suitable for demanding high-efficiency converters.

Key Specifications

Parameter Test Conditions Min. Typ. Max. Unit
VDS (Drain-Source Voltage) - - - 600 V
VBR(DSS) (Drain-Source Breakdown Voltage) ID = 1 mA, VGS = 0 - - 600 V
ID (Continuous Drain Current) - - - 26 A
RDS(on) (Static Drain-Source On-Resistance) VGS = 10 V, ID = 13 A - 0.108 0.125 Ω
VGS(th) (Gate Threshold Voltage) VDS = VGS, ID = 250 µA 2 3 4 V
Qg (Gate Charge) VDD = 480 V, ID = 26 A - - - nC

Key Features

  • Extremely low gate charge (Qg) using MDmesh II Plus™ technology
  • Lower RDS(on) x area compared to previous generations
  • MDmesh™ II technology for enhanced performance
  • Low gate input resistance
  • 100% avalanche tested for reliability
  • Zener-protected for added safety

Applications

  • Switching applications
  • LCC (Load Commutated Converter) and resonant converters
  • High-efficiency power converters requiring low on-resistance and gate charge

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STI33N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STI33N60M2?

    The typical on-resistance (RDS(on)) is 0.108 Ω.

  3. What is the continuous drain current (ID) rating of the STI33N60M2?

    The continuous drain current (ID) rating is 26 A.

  4. What technology is used in the STI33N60M2?

    The STI33N60M2 uses the MDmesh II Plus™ low Qg technology.

  5. What are the typical applications of the STI33N60M2?

    Typical applications include switching applications, LCC converters, and resonant converters.

  6. What is the gate threshold voltage (VGS(th)) of the STI33N60M2?

    The gate threshold voltage (VGS(th)) is between 2 V and 4 V.

  7. Is the STI33N60M2 100% avalanche tested?

    Yes, the STI33N60M2 is 100% avalanche tested.

  8. What package types are available for the STI33N60M2?

    The STI33N60M2 is available in the I2PAK package.

  9. What is the forward on voltage (VSD) of the source-drain diode?

    The forward on voltage (VSD) is approximately 1.6 V.

  10. What is the reverse recovery time (trr) of the source-drain diode?

    The reverse recovery time (trr) is approximately 375 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Same Series
STP33N60M2
STP33N60M2
MOSFET N-CH 600V 26A TO220
STW33N60M2
STW33N60M2
MOSFET N-CH 600V 26A TO247
STI33N60M2
STI33N60M2
MOSFET N-CH 600V 26A I2PAK

Similar Products

Part Number STI33N60M2 STI33N60M6 STI33N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 25A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V 125mOhm @ 12.5A, 10V 140mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 33.4 nC @ 10 V 41.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V 1515 pF @ 100 V 1790 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262) I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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