English
STI33N60M2
  • Share:

STMicroelectronics STI33N60M2

Manufacturer No:
STI33N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 26A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STI33N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh II Plus™ low Qg technology. This device is designed to offer exceptional efficiency and reliability in high-power applications. It features a vertical structure combined with a strip layout, resulting in one of the world's lowest on-resistance and gate charge values. This makes it particularly suitable for demanding high-efficiency converters.

Key Specifications

Parameter Test Conditions Min. Typ. Max. Unit
VDS (Drain-Source Voltage) - - - 600 V
VBR(DSS) (Drain-Source Breakdown Voltage) ID = 1 mA, VGS = 0 - - 600 V
ID (Continuous Drain Current) - - - 26 A
RDS(on) (Static Drain-Source On-Resistance) VGS = 10 V, ID = 13 A - 0.108 0.125 Ω
VGS(th) (Gate Threshold Voltage) VDS = VGS, ID = 250 µA 2 3 4 V
Qg (Gate Charge) VDD = 480 V, ID = 26 A - - - nC

Key Features

  • Extremely low gate charge (Qg) using MDmesh II Plus™ technology
  • Lower RDS(on) x area compared to previous generations
  • MDmesh™ II technology for enhanced performance
  • Low gate input resistance
  • 100% avalanche tested for reliability
  • Zener-protected for added safety

Applications

  • Switching applications
  • LCC (Load Commutated Converter) and resonant converters
  • High-efficiency power converters requiring low on-resistance and gate charge

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STI33N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STI33N60M2?

    The typical on-resistance (RDS(on)) is 0.108 Ω.

  3. What is the continuous drain current (ID) rating of the STI33N60M2?

    The continuous drain current (ID) rating is 26 A.

  4. What technology is used in the STI33N60M2?

    The STI33N60M2 uses the MDmesh II Plus™ low Qg technology.

  5. What are the typical applications of the STI33N60M2?

    Typical applications include switching applications, LCC converters, and resonant converters.

  6. What is the gate threshold voltage (VGS(th)) of the STI33N60M2?

    The gate threshold voltage (VGS(th)) is between 2 V and 4 V.

  7. Is the STI33N60M2 100% avalanche tested?

    Yes, the STI33N60M2 is 100% avalanche tested.

  8. What package types are available for the STI33N60M2?

    The STI33N60M2 is available in the I2PAK package.

  9. What is the forward on voltage (VSD) of the source-drain diode?

    The forward on voltage (VSD) is approximately 1.6 V.

  10. What is the reverse recovery time (trr) of the source-drain diode?

    The reverse recovery time (trr) is approximately 375 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$2.53
82

Please send RFQ , we will respond immediately.

Same Series
STP33N60M2
STP33N60M2
MOSFET N-CH 600V 26A TO220
STW33N60M2
STW33N60M2
MOSFET N-CH 600V 26A TO247
STI33N60M2
STI33N60M2
MOSFET N-CH 600V 26A I2PAK

Similar Products

Part Number STI33N60M2 STI33N60M6 STI33N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 25A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V 125mOhm @ 12.5A, 10V 140mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 33.4 nC @ 10 V 41.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V 1515 pF @ 100 V 1790 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 190W (Tc) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262) I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA