Overview
The STW28N60DM2 is a high-performance N-Channel Power MOSFET developed by STMicroelectronics. It is part of the MDmesh™ DM2 series, known for its low on-resistance and improved diode reverse recovery time, making it highly efficient for various high-power applications. This MOSFET is optimized for full-bridge phase-shifted ZVS (Zero Voltage Switching) topologies and other demanding high-efficiency converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N-Channel | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5 V | |
| Minimum Gate Threshold Voltage | 3 V | |
| Maximum Power Dissipation | 190 W | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
| Forward Diode Voltage | 1.6 V |
Key Features
- Low on-resistance (RDS(on)) of 160 mΩ
- Improved diode reverse recovery time for efficiency
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- High dV/dt capability for improved system reliability
- 100% avalanche tested and Zener-protected
- AEC-Q101 qualified for automotive applications
Applications
- Switching applications
- Full-bridge phase-shifted ZVS topologies
- High-efficiency converters such as bridge topologies and ZVS phase-shift converters
- LCC converters and resonant converters
Q & A
- What is the maximum continuous drain current of the STW28N60DM2 MOSFET?
The maximum continuous drain current is 22 A. - What is the maximum drain-source voltage of the STW28N60DM2 MOSFET?
The maximum drain-source voltage is 650 V. - What package type does the STW28N60DM2 MOSFET come in?
The STW28N60DM2 comes in a TO-247 package. - What is the maximum power dissipation of the STW28N60DM2 MOSFET?
The maximum power dissipation is 190 W. - Is the STW28N60DM2 MOSFET AEC-Q101 qualified?
Yes, the STW28N60DM2 is AEC-Q101 qualified. - What are the key features of the MDmesh™ DM2 series?
The key features include low on-resistance, improved diode reverse recovery time, fast-recovery body diode, extremely low gate charge, and high dV/dt capability. - What are the typical applications of the STW28N60DM2 MOSFET?
Typical applications include switching applications, full-bridge phase-shifted ZVS topologies, and high-efficiency converters. - What is the maximum operating temperature of the STW28N60DM2 MOSFET?
The maximum operating temperature is +150 °C. - What is the minimum operating temperature of the STW28N60DM2 MOSFET?
The minimum operating temperature is -55 °C. - What is the typical gate charge of the STW28N60DM2 MOSFET at Vgs = 10 V?
The typical gate charge is 39 nC at Vgs = 10 V.
