STP40N60M2
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STMicroelectronics STP40N60M2

Manufacturer No:
STP40N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP40N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it suitable for the most demanding high-efficiency converters. The STP40N60M2 features a 600V drain-source breakdown voltage, a typical on-resistance of 0.078 ohms, and a continuous drain current of 34A at 25°C. It is packaged in a TO-220 package and operates within a junction temperature range of -55 to 150°C.

Key Specifications

Parameter Value Unit
Channel Type N Channel -
Continuous Drain Current (Id) 34 A
Transistor Case Style TO-220 -
Drain Source Voltage (Vds) 600 V
Static Drain-Source On-Resistance (Rds(on)) 0.078 (typ), 0.088 (max) Ω
Gate-Source Threshold Voltage (Vgs(th)) 2-4 V
Gate-Source Charge (Qgs) 10 nC (typ) nC
Operating Temperature Max 150 °C
Power Dissipation 250 W
No. of Pins 3 -

Key Features

  • Extremely low gate charge and excellent output capacitance (Coss) profile
  • Lower Rds(on) x area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested and zener-protected
  • Optimized for high-efficiency converters due to low on-resistance and improved switching characteristics

Applications

  • Switching applications
  • LLC converters
  • Resonant converters

Q & A

  1. What is the drain-source breakdown voltage of the STP40N60M2?

    The drain-source breakdown voltage (Vds) is 600V.

  2. What is the typical on-resistance of the STP40N60M2?

    The typical on-resistance (Rds(on)) is 0.078 ohms.

  3. What is the continuous drain current of the STP40N60M2 at 25°C?

    The continuous drain current (Id) is 34A at 25°C.

  4. What is the operating junction temperature range of the STP40N60M2?

    The operating junction temperature range is -55 to 150°C.

  5. Is the STP40N60M2 100% avalanche tested?

    Yes, the STP40N60M2 is 100% avalanche tested and zener-protected.

  6. What are the typical applications of the STP40N60M2?

    The typical applications include switching applications, LLC converters, and resonant converters.

  7. What is the package type of the STP40N60M2?

    The STP40N60M2 is packaged in a TO-220 package.

  8. What is the gate-source threshold voltage of the STP40N60M2?

    The gate-source threshold voltage (Vgs(th)) is between 2 and 4 volts.

  9. What is the power dissipation of the STP40N60M2 at 25°C?

    The power dissipation is 250 watts at 25°C.

  10. Is the STP40N60M2 RoHS compliant?

    Yes, the STP40N60M2 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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In Stock

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Same Series
STB40N60M2
STB40N60M2
MOSFET N-CH 600V 34A D2PAK
STP40N60M2
STP40N60M2
MOSFET N-CH 600V 34A TO220
STW40N60M2-4
STW40N60M2-4
MOSFET N-CH 600V 34A TO247-3

Similar Products

Part Number STP40N60M2 STP40N65M2
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V 99mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 56.5 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 2355 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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