Overview
The STW70N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer high performance and efficiency, making it suitable for the most demanding high-efficiency converters. The MOSFET features a strip layout and an improved vertical structure, which results in low on-resistance and optimized switching characteristics. It is particularly well-suited for resonant-type switching supplies, such as LLC converters, due to its low gate charge and excellent output capacitance profile.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | N-Channel | |
| Maximum Continuous Drain Current | 68 | A |
| Maximum Drain Source Voltage | 600 | V |
| Maximum Drain Source On-State Resistance | 0.04 | Ω |
| Maximum Gate Threshold Voltage | 4 | V |
| Minimum Gate Threshold Voltage | 2 | V |
| Maximum Power Dissipation | 450 | W |
| Maximum Gate Source Voltage | -25 to +25 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum Operating Temperature | -55 | °C |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Typical Gate Charge @ Vgs | 118 nC @ 10 V | |
| Output Capacitance (Coss) | 250 pF |
Key Features
- Extremely low gate charge, which enhances switching efficiency.
- Excellent output capacitance (Coss) profile, contributing to better high-frequency performance.
- 100% avalanche tested, ensuring robustness and reliability under extreme conditions.
- Zener-protected, providing additional protection against voltage spikes and surges.
- Low on-resistance and optimized switching characteristics due to the advanced MDmesh™ M2 technology.
Applications
- Switching applications, particularly in high-efficiency converters such as LLC (Inductor-Inductor-Capacitor) converters.
- Resonant-type switching supplies, where low gate charge and excellent output capacitance are crucial.
- High-power electronic systems requiring efficient and reliable power management.
Q & A
- What is the maximum continuous drain current of the STW70N60M2 MOSFET?
The maximum continuous drain current is 68 A.
- What is the maximum drain-source voltage of the STW70N60M2?
The maximum drain-source voltage is 600 V.
- What is the typical on-state resistance of the STW70N60M2?
The typical on-state resistance is 0.04 Ω.
- What is the gate threshold voltage range of the STW70N60M2?
The gate threshold voltage range is from 2 V to 4 V.
- What is the maximum power dissipation of the STW70N60M2?
The maximum power dissipation is 450 W.
- What is the package type of the STW70N60M2?
The package type is TO-247.
- What are the key features of the MDmesh™ M2 technology used in the STW70N60M2?
The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche testing, and Zener protection.
- What are the typical applications of the STW70N60M2 MOSFET?
The typical applications include switching applications, particularly in high-efficiency converters such as LLC converters, and resonant-type switching supplies.
- What is the maximum operating temperature of the STW70N60M2?
The maximum operating temperature is 150 °C.
- What is the minimum operating temperature of the STW70N60M2?
The minimum operating temperature is -55 °C.
- What is the output capacitance (Coss) of the STW70N60M2?
The output capacitance (Coss) is 250 pF.
