STW70N65M2
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STMicroelectronics STW70N65M2

Manufacturer No:
STW70N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 63A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW70N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its electrical characteristics and thermal performance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
RDS(on) (On-Resistance)0.039 Ω (typical)
ID (Drain Current)63 A
Qg (Gate Charge)Extremely low
COSS (Output Capacitance)Excellent profile
Avalanche Testing100% tested
ProtectionZener-protected

Key Features

  • MDmesh M2 technology for improved performance and reliability
  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected for enhanced robustness

Applications

The STW70N65M2 is suitable for a wide range of high-power applications, including:

  • Power supplies and converters
  • Motor control and drives
  • Industrial and automotive systems
  • Renewable energy systems

Q & A

  1. What is the drain-source voltage rating of the STW70N65M2?
    The drain-source voltage rating is 650 V.
  2. What is the typical on-resistance of the STW70N65M2?
    The typical on-resistance is 0.039 Ω.
  3. What is the maximum drain current of the STW70N65M2?
    The maximum drain current is 63 A.
  4. What technology is used in the STW70N65M2?
    The STW70N65M2 uses MDmesh M2 technology.
  5. Is the STW70N65M2 avalanche tested?
    Yes, it is 100% avalanche tested.
  6. What kind of protection does the STW70N65M2 have?
    The STW70N65M2 is Zener-protected.
  7. What are some common applications for the STW70N65M2?
    Common applications include power supplies, motor control, industrial and automotive systems, and renewable energy systems.
  8. What is the significance of the low gate charge in the STW70N65M2?
    The low gate charge reduces switching losses and improves overall efficiency.
  9. How does the COSS profile of the STW70N65M2 benefit its performance?
    The excellent COSS profile helps in reducing the switching losses and improving the overall efficiency of the device.
  10. Is the STW70N65M2 suitable for high-power applications?
    Yes, it is designed for high-power applications due to its robust electrical and thermal characteristics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:46mOhm @ 31.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:5140 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW70N65M2 STW40N65M2 STW70N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc) 32A (Tc) 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 46mOhm @ 31.5A, 10V 99mOhm @ 16A, 10V 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V 56.5 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 5140 pF @ 100 V 2355 pF @ 100 V 5200 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 446W (Tc) 250W (Tc) 450W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247
Package / Case TO-247-3 TO-247-3 TO-247-3

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