Overview
The STW70N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast-recovery diode series. This device is designed for high-efficiency converters and is particularly suited for bridge topologies and ZVS phase-shift converters. It features a low on-resistance (RDS(on)) of 37 mΩ typical, a high continuous drain current (ID) of 66 A, and a total power dissipation (PTOT) of 446 W at Tcase = 25 °C. The MOSFET is packaged in a TO-247 package, ensuring robust thermal performance and ease of use in various applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 600 | V |
| RDS(on) (On-resistance) | 37 mΩ (typ.), 42 mΩ (max.) | mΩ |
| ID (Continuous drain current at Tcase = 25 °C) | 66 A | A |
| ID (Continuous drain current at Tcase = 100 °C) | 42 A | A |
| IDM (Pulsed drain current) | 264 A | A |
| PTOT (Total power dissipation at Tcase = 25 °C) | 446 W | W |
| VGS (Gate-source voltage) | ±25 V | V |
| Tstg (Storage temperature range) | -55 to 150 °C | °C |
| Tj (Operating junction temperature range) | -55 to 150 °C | °C |
| Rthj-case (Thermal resistance junction-case) | 0.28 °C/W | °C/W |
| Rthj-amb (Thermal resistance junction-ambient) | 50 °C/W | °C/W |
Key Features
- Fast-recovery body diode with low recovery charge (Qrr) and time (trr)
- Extremely low gate charge and input capacitance
- Low on-resistance (RDS(on)) of 37 mΩ typical
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
The STW70N60DM2 is ideal for various high-efficiency switching applications, including:
- Bridge topologies
- ZVS phase-shift converters
- High-power switching applications requiring low on-resistance and high current handling
Q & A
- What is the maximum drain-source voltage (VDS) of the STW70N60DM2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STW70N60DM2?
The typical on-resistance (RDS(on)) is 37 mΩ.
- What is the maximum continuous drain current (ID) at Tcase = 25 °C?
The maximum continuous drain current (ID) at Tcase = 25 °C is 66 A.
- What is the total power dissipation (PTOT) at Tcase = 25 °C?
The total power dissipation (PTOT) at Tcase = 25 °C is 446 W.
- What is the storage temperature range for the STW70N60DM2?
The storage temperature range is -55 to 150 °C.
- What are the key features of the STW70N60DM2?
The key features include a fast-recovery body diode, extremely low gate charge and input capacitance, low on-resistance, 100% avalanche tested, extremely high dv/dt ruggedness, and Zener protection.
- What are the typical applications for the STW70N60DM2?
The STW70N60DM2 is ideal for bridge topologies, ZVS phase-shift converters, and other high-power switching applications requiring low on-resistance and high current handling.
- What is the thermal resistance junction-case (Rthj-case) for the STW70N60DM2?
The thermal resistance junction-case (Rthj-case) is 0.28 °C/W.
- What is the reverse recovery time (trr) of the STW70N60DM2?
The reverse recovery time (trr) is 150 ns at Tj = 25 °C and 250 ns at Tj = 150 °C.
- What is the package type for the STW70N60DM2?
The STW70N60DM2 is packaged in a TO-247 package.
