STW70N60DM6
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STMicroelectronics STW70N60DM6

Manufacturer No:
STW70N60DM6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 62A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STW70N60DM6 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh DM6 fast-recovery diode series. This MOSFET is designed to offer superior performance in high-efficiency power conversion applications. It combines very low recovery charge (Qrr) and recovery time (trr) with excellent improvement in RDS(on) per area, making it ideal for demanding bridge topologies and ZVS phase-shift converters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 62 A
RDS(on) (On-Resistance) 36
PD (Power Dissipation) 390 W
TJ (Junction Temperature) -55 to 150 °C
Package TO-247-4

Key Features

  • Fast-recovery body diode
  • Lower RDS(on) per area compared to previous generations
  • Low gate charge, input capacitance, and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

The STW70N60DM6 is particularly suited for high-efficiency power conversion applications, including:

  • ZVS (Zero Voltage Switching) phase-shift converters
  • Full- and half-bridge topologies
  • SMPS (Switch-Mode Power Supplies)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the typical on-resistance (RDS(on)) of the STW70N60DM6?

    The typical on-resistance (RDS(on)) is 36 mΩ.

  2. What is the maximum drain current (ID) of the STW70N60DM6?

    The maximum drain current (ID) is 62 A.

  3. What is the drain-source voltage (VDS) rating of the STW70N60DM6?

    The drain-source voltage (VDS) rating is 600 V.

  4. What package type is the STW70N60DM6 available in?

    The STW70N60DM6 is available in the TO-247-4 package.

  5. What are the key improvements of the MDmesh DM6 series over previous generations?

    The MDmesh DM6 series offers lower RDS(on) per area, very low recovery charge (Qrr), and recovery time (trr), along with excellent switching behavior.

  6. Is the STW70N60DM6 100% avalanche tested?
  7. What is the operating junction temperature range of the STW70N60DM6?

    The operating junction temperature range is -55 to 150 °C.

  8. What are some common applications for the STW70N60DM6?
  9. Does the STW70N60DM6 have any special protection features?
  10. Where can I find EDA symbols, footprints, and 3D models for the STW70N60DM6?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW70N60DM6 STW75N60DM6 STWA70N60DM6 STW70N65DM6 STW70N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 72A (Tc) 62A (Tc) 68A (Tc) 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - - 10V 10V
Rds On (Max) @ Id, Vgs - - - 40mOhm @ 34A, 10V 42mOhm @ 33A, 10V
Vgs(th) (Max) @ Id - - - 4.75V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - 125 nC @ 10 V 121 nC @ 10 V
Vgs (Max) - - - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds - - - 4900 pF @ 100 V 5508 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) - - - 450W (Tc) 446W (Tc)
Operating Temperature - - - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247 Long Leads TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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