STW70N60M2-4
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STMicroelectronics STW70N60M2-4

Manufacturer No:
STW70N60M2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 68A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW70N60M2-4 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters in demanding applications.

The MOSFET features a strip layout and an improved vertical structure, which contribute to its excellent performance in power conversion applications such as switch-mode power supplies (SMPS), data centers, and solar microinverters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 68 A
RDS(on) (On-Resistance) 0.031 Ω
Qg (Gate Charge) Extremely Low nC
COSS (Output Capacitance) Excellent Profile pF
Package TO-247 -
Operating Temperature Range -55 to 150 °C

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected
  • Excellent switching performance thanks to the extra driving source pin (Kelvin-source lead)

Applications

The STW70N60M2-4 is designed for use in various high-efficiency power conversion applications, including:

  • Switch-mode power supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Industrial power systems

Q & A

  1. What is the STW70N60M2-4?

    The STW70N60M2-4 is an N-channel Power MOSFET developed by STMicroelectronics using MDmesh™ M2 technology.

  2. What are the key features of the STW70N60M2-4?

    Key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, Zener-protected, and excellent switching performance.

  3. What is the typical on-resistance of the STW70N60M2-4?

    The typical on-resistance (RDS(on)) is 0.031 Ω.

  4. What is the maximum drain current of the STW70N60M2-4?

    The maximum drain current (ID) is 68 A.

  5. What package is the STW70N60M2-4 available in?

    The STW70N60M2-4 is available in the TO-247 package.

  6. What are the operating temperature ranges for the STW70N60M2-4?

    The operating temperature range is from -55°C to 150°C.

  7. What applications is the STW70N60M2-4 suitable for?

    It is suitable for switch-mode power supplies (SMPS), data centers, solar microinverters, and industrial power systems.

  8. Does the STW70N60M2-4 have any special protection features?

    Yes, it is 100% avalanche tested and Zener-protected.

  9. How does the Kelvin-source lead improve performance?

    The Kelvin-source lead helps in reducing turn-on/turn-off switching losses, thereby improving efficiency.

  10. Where can I find EDA symbols, footprints, and 3D models for the STW70N60M2-4?

    These resources can be downloaded from the STMicroelectronics website in various CAD formats.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:118 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):450W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
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Same Series
STW70N60M2
STW70N60M2
MOSFET N-CH 600V 68A TO247

Similar Products

Part Number STW70N60M2-4 STW40N60M2-4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 34A, 10V 88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 100 V 2500 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 450W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4 TO-247-3
Package / Case TO-247-4 TO-247-3

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