Overview
The STP80NF55 series from STMicroelectronics represents a cutting-edge development in power MOSFET technology, utilizing the unique 'Single Feature Size™' strip-based process. This process results in transistors with extremely high packing density, leading to low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. These MOSFETs are part of the STripFET™ II family, known for their exceptional performance and reliability in various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type of Transistor | N-channel MOSFET | |
| Drain-Source Voltage (VDS) | 55 | V |
| Drain Current (ID) | 80 A (TO-220), 60 A (TO-220FP) | A |
| On-State Resistance (RDS(on)) | < 0.0065 Ω | Ω |
| Gate-Source Voltage (VGS) | ±20 | V |
| Gate Threshold Voltage (VGS(th)) | 4 | V |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Maximum Power Dissipation (Pd) | 300 W | W |
| Package | TO-220, TO-220FP, I²PAK, D²PAK | |
| Thermal Resistance Junction-Case (RthJC) | 0.5 °C/W (TO-220), 3.33 °C/W (TO-220FP) | °C/W |
| Thermal Resistance Junction-Ambient (RthJA) | 62.5 °C/W | °C/W |
Key Features
- Exceptional dv/dt Capability: High immunity to voltage spikes and transients.
- Rugged Avalanche Characteristics: Ensures robust performance under high-stress conditions.
- Low On-Resistance: Minimizes power losses and enhances efficiency.
- High Packing Density: Achieved through the 'Single Feature Size™' strip-based process, leading to improved manufacturing reproducibility.
- 100% Avalanche Tested: Ensures reliability and durability in demanding applications.
- Enhancement Mode: The MOSFET operates in enhancement mode, providing better control over the drain current.
Applications
- Switching Applications: Ideal for high-frequency switching in power supplies, motor control, and other high-power electronic systems.
- Industrial and Automotive Systems: Suitable for a broad range of industrial and automotive applications requiring high reliability and performance.
- Power Management Systems: Used in power management systems where high efficiency and robustness are critical.
Q & A
- What is the maximum drain-source voltage of the STP80NF55 MOSFET?
The maximum drain-source voltage (VDS) is 55 V.
- What is the maximum drain current for the TO-220 and TO-220FP packages?
The maximum drain current (ID) is 80 A for the TO-220 package and 60 A for the TO-220FP package.
- What is the on-state resistance of the STP80NF55 MOSFET?
The on-state resistance (RDS(on)) is less than 0.0065 Ω.
- What are the thermal resistance values for the junction-case and junction-ambient?
The thermal resistance junction-case (RthJC) is 0.5 °C/W for TO-220 and 3.33 °C/W for TO-220FP, while the thermal resistance junction-ambient (RthJA) is 62.5 °C/W.
- What is the maximum junction temperature for the STP80NF55 MOSFET?
The maximum junction temperature (Tj) is 175 °C.
- What are the typical applications of the STP80NF55 MOSFET?
The STP80NF55 MOSFET is typically used in switching applications, industrial and automotive systems, and power management systems.
- What is the 'Single Feature Size™' strip-based process, and how does it benefit the MOSFET?
The 'Single Feature Size™' strip-based process enhances the packing density, reduces on-resistance, and improves manufacturing reproducibility.
- Is the STP80NF55 MOSFET 100% avalanche tested?
Yes, the STP80NF55 MOSFET is 100% avalanche tested, ensuring its reliability and durability.
- What are the available packages for the STP80NF55 MOSFET?
The available packages include TO-220, TO-220FP, I²PAK, and D²PAK.
- What is the maximum gate-source voltage for the STP80NF55 MOSFET?
The maximum gate-source voltage (VGS) is ±20 V.
