Overview
The AO3415_108, manufactured by Alpha & Omega Semiconductor Inc., is a high-performance P-Channel MOSFET designed for various power management applications. This device utilizes advanced trench technology to offer excellent on-state resistance (RDS(ON)) and low gate charge, making it suitable for high-efficiency power switching and load management.
The AO3415_108 is part of the AO3415 series, which is known for its reliability and compliance with RoHS and Green Product requirements. It is available in several package types, including TO-236-3, SC-59, and SOT-23-3, ensuring versatility in design and implementation.
Key Specifications
| Parameter | Symbol | Rating | Units |
|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V |
| Gate-Source Voltage | VGS | ±8 | V |
| Continuous Drain Current | ID | -4 | A |
| Maximum Junction Temperature | TJ | 150 | °C |
| Gate Threshold Voltage | VGS(th) | -0.3 to -0.9 | V |
| On-State Resistance (RDS(ON)) at VGS = -4.5V | RDS(ON) | < 41 mΩ | mΩ |
| Total Gate Charge | Qg | 9.3 nC | nC |
| Input Capacitance | Ciss | 1450 pF @ 10V | pF |
| Output Capacitance | Coss | 115 pF | pF |
| Maximum Power Dissipation | Pd | 1.5 W | W |
Key Features
- Advanced Trench Technology: Provides excellent RDS(ON) and low gate charge, enhancing efficiency in power switching applications.
- Low On-State Resistance: RDS(ON) as low as 41 mΩ at VGS = -4.5V, ensuring minimal power loss.
- Low Gate Charge: Total gate charge of 9.3 nC, facilitating fast switching times.
- Low Gate Voltage Operation: Can operate with gate voltages as low as 1.8V, making it versatile for various applications.
- High Cell Density: Designed for high cell density, which improves overall performance and reliability.
- ESD Protection: ESD rating of 3000V HBM, providing robust protection against electrostatic discharge.
- RoHS and Green Product Compliance: Meets environmental standards, ensuring sustainability and compliance with regulatory requirements.
Applications
- Load Switching: Ideal for load switch applications due to its low RDS(ON) and fast switching capabilities.
- PWM Applications: Suitable for pulse-width modulation (PWM) applications in power management systems.
- Synchronous Buck Converters: Optimized for use in synchronous buck converters, where high efficiency and low power loss are critical.
- Power Driver Modules: Used in power driver modules for various electronic devices requiring efficient power management.
Q & A
- What is the maximum drain-source voltage (VDS) of the AO3415_108 MOSFET?
The maximum drain-source voltage (VDS) is -20V.
- What is the continuous drain current (ID) rating of the AO3415_108?
The continuous drain current (ID) is rated at -4A.
- What is the typical on-state resistance (RDS(ON)) of the AO3415_108 at VGS = -4.5V?
The typical on-state resistance (RDS(ON)) is less than 41 mΩ at VGS = -4.5V.
- What is the maximum gate-source voltage (VGS) for the AO3415_108?
The maximum gate-source voltage (VGS) is ±8V.
- What is the maximum junction temperature (TJ) for the AO3415_108?
The maximum junction temperature (TJ) is 150°C.
- What is the total gate charge (Qg) of the AO3415_108?
The total gate charge (Qg) is 9.3 nC.
- What are the typical applications of the AO3415_108 MOSFET?
The AO3415_108 is typically used in load switching, PWM applications, synchronous buck converters, and power driver modules.
- Does the AO3415_108 comply with RoHS and Green Product requirements?
Yes, the AO3415_108 meets RoHS and Green Product requirements.
- What is the maximum power dissipation (Pd) of the AO3415_108?
The maximum power dissipation (Pd) is 1.5 W.
- What are the available package types for the AO3415_108?
The AO3415_108 is available in TO-236-3, SC-59, and SOT-23-3 packages.
- What is the ESD rating of the AO3415_108?
The ESD rating is 3000V HBM.
