AO3401A
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Alpha & Omega Semiconductor Inc. AO3401A

Manufacturer No:
AO3401A
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4A SOT23-3L
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The AO3401A is a P-channel enhancement mode MOSFET developed by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench technology to offer excellent on-state resistance (RDS(ON)), low gate charge, and efficient operation with gate voltages as low as 2.5V. It is particularly suited for applications requiring high performance and reliability in small power switching and load switch scenarios.

Key Specifications

Parameter Value Units
Drain-Source Voltage (VDS) -30 V
Gate-Source Voltage (VGS) ±12 V
Maximum Drain Current (ID) -4 A
On-State Resistance (RDS(ON)) at VGS = -10V < 50
On-State Resistance (RDS(ON)) at VGS = -4.5V < 60
On-State Resistance (RDS(ON)) at VGS = -2.5V < 85
Maximum Junction Temperature (TJ) 150 °C
Maximum Power Dissipation (PD) 1.4 W
Gate Threshold Voltage (VGS(th)) 1.3 V
Total Gate Charge (Qg) 7 nC
Rise Time (tr) 3.5 nS
Output Capacitance (Coss) 80 pF
Package SOT-23, TO-236-3, SC-59

Key Features

  • Advanced trench technology for excellent RDS(ON) and low gate charge.
  • Operation with gate voltages as low as 2.5V.
  • Fast switching capabilities.
  • Gull Wing style lead for surface mounting.
  • Compliant with RoHS and Green Product requirements.

Applications

  • Load switch applications.
  • PWM (Pulse Width Modulation) applications.
  • Mobile computing devices.
  • Notebook adapter switches.
  • DC/DC converters.
  • Industrial and domestic uses.

Q & A

  1. What is the maximum drain-source voltage of the AO3401A MOSFET?

    The maximum drain-source voltage (VDS) is -30V.

  2. What is the maximum gate-source voltage of the AO3401A MOSFET?

    The maximum gate-source voltage (VGS) is ±12V.

  3. What is the maximum drain current of the AO3401A MOSFET?

    The maximum drain current (ID) is -4A at VGS = -10V.

  4. What is the typical on-state resistance (RDS(ON)) of the AO3401A MOSFET?

    The typical RDS(ON) is less than 50mΩ at VGS = -10V, less than 60mΩ at VGS = -4.5V, and less than 85mΩ at VGS = -2.5V.

  5. What is the maximum junction temperature of the AO3401A MOSFET?

    The maximum junction temperature (TJ) is 150°C.

  6. What is the maximum power dissipation of the AO3401A MOSFET?

    The maximum power dissipation (PD) is 1.4W.

  7. What package types are available for the AO3401A MOSFET?

    The AO3401A is available in SOT-23, TO-236-3, and SC-59 packages.

  8. Is the AO3401A MOSFET RoHS compliant?

    Yes, the AO3401A is RoHS and Green Product compliant.

  9. What are some common applications of the AO3401A MOSFET?

    Common applications include load switches, PWM applications, mobile computing devices, notebook adapter switches, and DC/DC converters.

  10. What is the gate threshold voltage of the AO3401A MOSFET?

    The gate threshold voltage (VGS(th)) is approximately 1.3V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:44mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.2 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
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Similar Products

Part Number AO3401A AO3407A AO3404A AO3401AL AO3401L AO3400A AO3401
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs Obsolete Obsolete Not For New Designs Not For New Designs
FET Type P-Channel P-Channel N-Channel P-Channel P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4.3A (Ta) 5.8A (Ta) 4A (Ta) 4.2A (Ta) 5.7A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 10V 2.5V, 10V 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 4.3A, 10V 48mOhm @ 4.3A, 10V 28mOhm @ 5.8A, 10V 50mOhm @ 4A, 10V 50mOhm @ 4.2A, 10V 26.5mOhm @ 5.7A, 10V 50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250µA 3V @ 250µA 3V @ 250µA 1.3V @ 250µA 1.3V @ 250µA 1.5V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.2 nC @ 4.5 V 16 nC @ 10 V 17 nC @ 10 V 14 nC @ 10 V 9.4 nC @ 4.5 V 7 nC @ 4.5 V 14 nC @ 10 V
Vgs (Max) ±12V ±20V ±20V ±12V ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 15 V 830 pF @ 15 V 820 pF @ 15 V 645 pF @ 15 V 954 pF @ 15 V 630 pF @ 15 V 645 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

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