AO3415A
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Alpha & Omega Semiconductor Inc. AO3415A

Manufacturer No:
AO3415A
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 5A SOT23-3L
Delivery:
Payment:
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Product Introduction

Overview

The AO3415A is a P-channel power MOSFET produced by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench technology to offer excellent on-resistance (RDS(ON)), low gate charge, and operation with gate voltages as low as 1.8V. It is designed for use in various electronic applications requiring efficient switching and amplification of signals.

Key Specifications

Parameter Value Units
Maximum Drain-Source Voltage (VDS) -20 V
Maximum Gate-Source Voltage (VGS) ±8 V
Maximum Drain Current (ID) -5 A
On-Resistance (RDS(ON)) at VGS = -4.5V < 41 mΩ
Total Gate Charge (Qg) 9.3 nC nC
Rise Time (tr) 9 ns ns
Output Capacitance (Coss) 115 pF pF
Maximum Junction Temperature (TJ) 150 °C °C
Operating Temperature Range -55 to 150 °C °C
Package Type SOT-23, TO-236-3, SC-59
Maximum Power Dissipation (Pd) 1.5 W W

Key Features

  • Advanced trench technology for low RDS(ON) and gate charge.
  • Operation with gate voltages as low as 1.8V.
  • High maximum drain current of -5 A.
  • Low on-resistance: < 41 mΩ at VGS = -4.5V.
  • ESD protected.
  • Wide operating temperature range: -55 to 150 °C.
  • Available in SOT-23, TO-236-3, and SC-59 packages.

Applications

The AO3415A is suitable for various applications, including:

  • Load switch applications.
  • Power management in electronic devices.
  • DC-DC converters.
  • Motor control and drive systems.
  • Automotive and industrial electronics.

Q & A

  1. What is the maximum drain-source voltage of the AO3415A?

    The maximum drain-source voltage (VDS) is -20 V.

  2. What is the maximum gate-source voltage of the AO3415A?

    The maximum gate-source voltage (VGS) is ±8 V.

  3. What is the on-resistance (RDS(ON)) of the AO3415A at VGS = -4.5V?

    The on-resistance (RDS(ON)) at VGS = -4.5V is less than 41 mΩ.

  4. What is the total gate charge (Qg) of the AO3415A?

    The total gate charge (Qg) is 9.3 nC.

  5. What is the operating temperature range of the AO3415A?

    The operating temperature range is -55 to 150 °C.

  6. In what packages is the AO3415A available?

    The AO3415A is available in SOT-23, TO-236-3, and SC-59 packages.

  7. What is the maximum power dissipation of the AO3415A?

    The maximum power dissipation is 1.5 W.

  8. Is the AO3415A ESD protected?

    Yes, the AO3415A is ESD protected.

  9. What are some typical applications of the AO3415A?

    Typical applications include load switch applications, power management, DC-DC converters, motor control, and automotive and industrial electronics.

  10. What is the rise time (tr) of the AO3415A?

    The rise time (tr) is 9 ns.

  11. What is the output capacitance (Coss) of the AO3415A?

    The output capacitance (Coss) is 115 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:45mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
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Same Series
AO3415A
AO3415A
MOSFET P-CH 20V 5A SOT23-3L

Similar Products

Part Number AO3415A AO3415
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Not For New Designs Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 45mOhm @ 4A, 4.5V 43mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V 17.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 10 V 1450 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

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