AO3401
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Alpha & Omega Semiconductor Inc. AO3401

Manufacturer No:
AO3401
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4A SOT23-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The AO3401 is a P-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. This device is designed for reliable performance in various electronic applications, particularly where high current handling and compact packaging are essential. The AO3401 uses advanced trench technology to provide excellent on-state resistance (RDS(ON)), low gate charge, and operation with gate voltages as low as 2.5V. It is housed in a SOT-23-3L package, making it ideal for compact circuit designs and PCB space optimization.

Key Specifications

Parameter Value Units
Maximum Drain-Source Voltage (VDS) -30 V
Maximum Gate-Source Voltage (VGS) ±12 V
Maximum Drain Current (ID) -4.2 A
On-State Resistance (RDS(ON)) at VGS = -10V < 50mΩ Ω
On-State Resistance (RDS(ON)) at VGS = -4.5V < 65mΩ Ω
On-State Resistance (RDS(ON)) at VGS = -2.5V < 85mΩ Ω
Maximum Junction Temperature (TJ) 150 °C
Total Gate Charge (Qg) 9.4 nC nC
Rise Time (tr) 3.2 nS nS
Output Capacitance (Coss) 115 pF pF
Package SOT-23-3L

Key Features

  • High Current Handling: The AO3401 offers high current handling capabilities, making it suitable for demanding applications.
  • Compact Package: Housed in a SOT-23-3L package, it is ideal for compact circuit designs and PCB space optimization.
  • Advanced Trench Technology: Provides excellent on-state resistance (RDS(ON)), low gate charge, and operation with gate voltages as low as 2.5V.
  • Low On-State Resistance: RDS(ON) values of less than 50mΩ at VGS = -10V, less than 65mΩ at VGS = -4.5V, and less than 85mΩ at VGS = -2.5V.
  • Suitable for Various Applications: Ideal for use as a load switch or in PWM applications.

Applications

  • Power Management Systems: Suitable for power management in various electronic devices.
  • Motor Control Circuits: Used in motor control circuits due to its high current handling and low on-state resistance.
  • Automotive Electronics: Commonly used in automotive electronics for reliable and efficient power management.
  • Industrial Automation Systems: Applied in industrial automation systems where compact and high-performance MOSFETs are required.
  • Load Switching and PWM Applications: Ideal for load switching and PWM applications due to its low gate charge and operation with low gate voltages.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the AO3401?

    The maximum drain-source voltage (VDS) of the AO3401 is -30V.

  2. What is the maximum drain current (ID) of the AO3401?

    The maximum drain current (ID) of the AO3401 is -4.2A.

  3. What package types are available for the AO3401?

    The AO3401 is available in TO-236-3, SC-59, and SOT-23-3 packages.

  4. What is the on-state resistance (RDS(ON)) of the AO3401 at VGS = -10V?

    The on-state resistance (RDS(ON)) of the AO3401 at VGS = -10V is less than 50mΩ.

  5. What are the typical applications of the AO3401?

    The AO3401 is typically used in power management systems, motor control circuits, automotive electronics, and industrial automation systems.

  6. What technology does the AO3401 use to achieve its performance?

    The AO3401 uses advanced trench technology to provide excellent on-state resistance and low gate charge.

  7. What is the maximum junction temperature (TJ) of the AO3401?

    The maximum junction temperature (TJ) of the AO3401 is 150°C.

  8. What is the total gate charge (Qg) of the AO3401?

    The total gate charge (Qg) of the AO3401 is 9.4 nC.

  9. Is the AO3401 suitable for PWM applications?

    Yes, the AO3401 is suitable for PWM applications due to its low gate charge and operation with low gate voltages.

  10. What is the output capacitance (Coss) of the AO3401?

    The output capacitance (Coss) of the AO3401 is 115 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
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Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Active Obsolete Obsolete Obsolete Obsolete Last Time Buy
FET Type P-Channel P-Channel N-Channel P-Channel N-Channel P-Channel P-Channel P-Channel P-Channel N-Channel P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 2.6A (Ta) 4A (Ta) 2.6A (Ta) 3.6A (Ta) 4A (Ta) 2.6A (Ta) 4.1A (Ta) 4.2A (Ta) 5A (Ta) 4A (Ta) 4A (Ta) 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 4.5V, 10V 2.5V, 10V 2.5V, 10V 4.5V, 10V 2.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 10V 4.5V, 10V 2.5V, 10V 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V 130mOhm @ 2.6A, 10V 55mOhm @ 4A, 10V 115mOhm @ 2.6A, 10V 50mOhm @ 3.6A, 10V 44mOhm @ 4.3A, 10V 110mOhm @ 2.6A, 10V 52mOhm @ 4.1A, 10V 50mOhm @ 4.2A, 10V 31mOhm @ 5A, 10V 50mOhm @ 4A, 10V 50mOhm @ 4A, 10V 28mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250µA 3V @ 250µA 1.4V @ 250µA 1.4V @ 250µA 2.5V @ 250µA 1.3V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 1.3V @ 250µA 2.4V @ 250µA 1.3V @ 250µA 1.3V @ 250µA 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 9 nC @ 10 V 4.34 nC @ 4.5 V 7.2 nC @ 10 V 5 nC @ 10 V 12.2 nC @ 4.5 V 5.2 nC @ 10 V 11 nC @ 10 V 9.4 nC @ 4.5 V 6.3 nC @ 10 V 20 nC @ 10 V 14 nC @ 10 V 7 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±12V ±12V ±20V ±12V ±20V ±20V ±12V ±20V ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 15 V 370 pF @ 15 V 390 pF @ 15 V 315 pF @ 15 V 210 pF @ 15 V 1200 pF @ 15 V 240 pF @ 15 V 520 pF @ 15 V 954 pF @ 15 V 310 pF @ 15 V 645 pF @ 15 V 645 pF @ 15 V 630 pF @ 15 V
FET Feature - - - - - - - - - - - - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

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