Overview
The AO4407A is a 30V P-Channel MOSFET developed by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench technology to offer excellent on-resistance (RDS(ON)) and ultra-low gate charge. It is designed to be highly efficient and reliable, making it suitable for various power management applications.
The AO4407A is packaged in an SOIC-8 format and is RoHS and Halogen-Free compliant, ensuring environmental sustainability. The device is ideal for use as a load switch or in PWM (Pulse Width Modulation) applications due to its low on-resistance and fast switching characteristics.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -30 | - | -30 | V |
| Gate-Source Voltage | VGS | - | - | ±25 | V |
| Continuous Drain Current | ID | -12 | - | -12 | A |
| Pulsed Drain Current | IDM | - | - | -60 | A |
| On-Resistance (VGS = -20V) | RDS(ON) | - | 11 | 13 | mΩ |
| On-Resistance (VGS = -10V) | RDS(ON) | - | 13 | 14 | mΩ |
| On-Resistance (VGS = -6V) | RDS(ON) | - | 17 | - | mΩ |
| Gate Threshold Voltage | VGS(th) | -1.7 | -2.3 | -3 | V |
| Total Gate Charge | Qg | 30 | 39 | - | nC |
| Junction-to-Ambient Thermal Resistance | RθJA | 31 | - | 59 | °C/W |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | - | 150 | °C |
Key Features
- Advanced Trench Technology: Provides excellent on-resistance (RDS(ON)) and ultra-low gate charge.
- Low On-Resistance: RDS(ON) < 11mΩ at VGS = -20V, < 13mΩ at VGS = -10V, and < 17mΩ at VGS = -6V.
- Fast Switching: Fast turn-on and turn-off times, with tD(on) = 11ns and tD(off) = 24ns.
- High Current Capability: Continuous drain current of -12A and pulsed drain current of -60A.
- Environmental Compliance: RoHS and Halogen-Free compliant.
- Package: SOIC-8 format for compact and efficient design.
Applications
- Load Switching: Ideal for use as a load switch due to its low on-resistance and fast switching characteristics.
- PWM Applications: Suitable for Pulse Width Modulation applications requiring high efficiency and reliability.
- Battery Protection: Can be used in battery protection circuits to manage and protect battery health.
- Power Management: General power management applications where low on-resistance and high current handling are required.
Q & A
- What is the maximum drain-source voltage of the AO4407A?
The maximum drain-source voltage (VDS) is -30V.
- What are the typical on-resistance values for the AO4407A at different gate-source voltages?
The typical on-resistance (RDS(ON)) is less than 11mΩ at VGS = -20V, less than 13mΩ at VGS = -10V, and less than 17mΩ at VGS = -6V.
- What is the continuous drain current rating of the AO4407A?
The continuous drain current (ID) is -12A.
- What is the total gate charge of the AO4407A?
The total gate charge (Qg) is between 30nC and 39nC.
- Is the AO4407A RoHS and Halogen-Free compliant?
Yes, the AO4407A is RoHS and Halogen-Free compliant.
- What is the junction-to-ambient thermal resistance of the AO4407A?
The junction-to-ambient thermal resistance (RθJA) is between 31°C/W and 59°C/W.
- What are the typical turn-on and turn-off times for the AO4407A?
The typical turn-on time (tD(on)) is 11ns, and the typical turn-off time (tD(off)) is 24ns.
- What are some common applications for the AO4407A?
The AO4407A is commonly used in load switching, PWM applications, battery protection, and general power management.
- What package type is the AO4407A available in?
The AO4407A is available in the SOIC-8 package format.
- What is the junction and storage temperature range for the AO4407A?
The junction and storage temperature range is from -55°C to 150°C.
