Overview
The AO3415L_108 is a P-Channel power MOSFET produced by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench technology to offer excellent performance characteristics, making it suitable for a variety of applications. The AO3415L_108 operates in enhancement mode and is known for its low on-resistance (RDS(ON)) and low gate charge, enabling efficient switching and amplification of electronic signals.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Drain-Source Voltage (VDS) | 20 | V |
| Gate-Source Voltage (VGS) | ±8 | V |
| Continuous Drain Current (ID) | 4 | A |
| On-Resistance (RDS(ON)) at VGS = -4.5V, ID = -4A | 41 | mΩ |
| On-Resistance (RDS(ON)) at VGS = -2.5V, ID = -4A | 53 | mΩ |
| On-Resistance (RDS(ON)) at VGS = -1.8V, ID = -2A | 65 | mΩ |
| Power Dissipation (PD) | 1.5 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | SOT-23-3 | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) at VDS = 10V | 1450 | pF |
| Gate Charge (Qg) at VGS = -4.5V | 17.2 | nC |
Key Features
- Advanced Trench Technology: Provides excellent on-resistance (RDS(ON)) and low gate charge, enhancing switching efficiency.
- Low Gate Voltage Operation: Can operate with gate voltages as low as 1.8V.
- High Current Capability: Continuous drain current of up to 4A.
- Wide Operating Temperature Range: From -55°C to 150°C, making it suitable for various environmental conditions.
- ESD Protection: Built-in ESD protection for enhanced reliability.
- Compact Package: Available in SOT-23-3 package, ideal for space-constrained designs.
Applications
- Load Switch Applications: Ideal for use as a load switch due to its low on-resistance and high current capability.
- Power Management: Suitable for power management circuits requiring efficient switching and amplification.
- Automotive Systems: Can be used in automotive applications due to its wide operating temperature range and robust design.
- Consumer Electronics: Applicable in various consumer electronic devices requiring compact and efficient power MOSFETs.
Q & A
- What is the maximum drain-source voltage (VDS) of the AO3415L_108?
The maximum drain-source voltage (VDS) is 20V.
- What is the continuous drain current (ID) of the AO3415L_108?
The continuous drain current (ID) is up to 4A.
- What is the on-resistance (RDS(ON)) of the AO3415L_108 at VGS = -4.5V and ID = -4A?
The on-resistance (RDS(ON)) is less than 41mΩ.
- What is the operating temperature range of the AO3415L_108?
The operating temperature range is from -55°C to 150°C.
- What package types are available for the AO3415L_108?
The AO3415L_108 is available in SOT-23-3, TO-236-3, and SC-59 packages.
- Does the AO3415L_108 have ESD protection?
Yes, the AO3415L_108 has built-in ESD protection.
- What is the input capacitance (Ciss) of the AO3415L_108 at VDS = 10V?
The input capacitance (Ciss) is 1450 pF at VDS = 10V.
- What is the gate charge (Qg) of the AO3415L_108 at VGS = -4.5V?
The gate charge (Qg) is 17.2 nC at VGS = -4.5V.
- Can the AO3415L_108 operate with low gate voltages?
Yes, it can operate with gate voltages as low as 1.8V.
- What are some common applications of the AO3415L_108?
Common applications include load switch applications, power management circuits, automotive systems, and consumer electronics.
