AO3401L
  • Share:

Alpha & Omega Semiconductor Inc. AO3401L

Manufacturer No:
AO3401L
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AO3401L, produced by Alpha & Omega Semiconductor Inc., is a P-Channel Enhancement Mode Field Effect Transistor (MOSFET) that utilizes advanced trench technology. This device is designed to offer excellent on-state resistance (RDS(ON)), low gate charge, and the ability to operate with gate voltages as low as 2.5V. It is particularly suitable for applications such as load switching and Pulse Width Modulation (PWM).

Key Specifications

Parameter Typical Value Maximum Value Units
Drain-Source Voltage (VDS) -30 -30 V
Gate-Source Voltage (VGS) -12 -12 V
Gate Threshold Voltage (VGS(th)) -0.9 -1.3 V
Drain Current (ID) -4.2 -4.2 A
On-State Resistance (RDS(ON)) at VGS = -10V 50mΩ 60mΩ Ω
On-State Resistance (RDS(ON)) at VGS = -4.5V 65mΩ 75mΩ Ω
On-State Resistance (RDS(ON)) at VGS = -2.5V 90mΩ 120mΩ Ω
Total Gate Charge (Qg) 9.4nC 14nC nC
Rise Time (tr) 3.2ns 3.5ns ns
Output Capacitance (Coss) 80pF 115pF pF
Maximum Junction Temperature (TJ) - 150°C °C
Package - SOT23-3, TO-236-3, SC-59 -

Key Features

  • Advanced trench technology for low RDS(ON) and low gate charge.
  • Operation with gate voltages as low as 2.5V.
  • High cell density for excellent on-resistance and maximum DC current capability.
  • Suitable for load switching and PWM applications.
  • Compliant with RoHS and Green Product requirements.
  • Low rise and fall times, making it suitable for high-frequency applications.

Applications

  • Load switching in various electronic devices.
  • Pulse Width Modulation (PWM) applications.
  • Mobile computing devices.
  • Notebook adapter switches.
  • DC/DC converters.

Q & A

  1. What is the maximum drain-source voltage of the AO3401L?

    The maximum drain-source voltage (VDS) is -30V.

  2. What is the typical on-state resistance (RDS(ON)) at VGS = -10V?

    The typical RDS(ON) at VGS = -10V is 50mΩ.

  3. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is from -0.5V to -1.3V.

  4. What is the maximum drain current (ID) rating?

    The maximum drain current (ID) is -4.2A.

  5. What are the typical gate charge values?

    The total gate charge (Qg) is typically around 9.4nC.

  6. What is the rise time (tr) of the AO3401L?

    The rise time (tr) is typically around 3.2ns.

  7. What are the package options for the AO3401L?

    The AO3401L is available in SOT23-3, TO-236-3, and SC-59 packages.

  8. Is the AO3401L RoHS compliant?

    Yes, the AO3401L is compliant with RoHS and Green Product requirements.

  9. What are some common applications of the AO3401L?

    Common applications include load switching, PWM, mobile computing devices, notebook adapter switches, and DC/DC converters.

  10. What is the maximum junction temperature of the AO3401L?

    The maximum junction temperature (TJ) is 150°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:954 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
0 Remaining View Similar

In Stock

-
135

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number AO3401L AO3421L AO3406L AO3402L AO3403L AO3407L AO3409L AO3401 AO3401A AO3401AL
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Not For New Designs Not For New Designs Obsolete
FET Type P-Channel P-Channel N-Channel N-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 2.6A (Ta) 3.6A (Ta) 4A (Ta) 2.6A (Ta) 4.1A (Ta) 2.6A (Ta) 4A (Ta) 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 10V 2.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 10V 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.2A, 10V 130mOhm @ 2.6A, 10V 50mOhm @ 3.6A, 10V 55mOhm @ 4A, 10V 130mOhm @ 2.6A, 10V 52mOhm @ 4.1A, 10V 130mOhm @ 2.6A, 10V 50mOhm @ 4A, 10V 44mOhm @ 4.3A, 10V 50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250µA 3V @ 250µA 2.5V @ 250µA 1.4V @ 250µA 1.4V @ 250µA 3V @ 250µA 3V @ 250µA 1.3V @ 250µA 1.3V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 4.5 V 9 nC @ 10 V 5 nC @ 10 V 4.34 nC @ 4.5 V 5.3 nC @ 4.5 V 18 nC @ 10 V 9 nC @ 10 V 14 nC @ 10 V 12.2 nC @ 4.5 V 14 nC @ 10 V
Vgs (Max) ±12V ±20V ±20V ±12V ±12V ±20V ±20V ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 954 pF @ 15 V 370 pF @ 15 V 210 pF @ 15 V 390 pF @ 15 V 500 pF @ 15 V 840 pF @ 15 V 370 pF @ 15 V 645 pF @ 15 V 1200 pF @ 15 V 645 pF @ 15 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK

Related Product By Brand

AON6512
AON6512
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 54A/150A 8DFN
AO3401
AO3401
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4A SOT23-3
AO3400
AO3400
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5.8A SOT23-3
AOD4185L
AOD4185L
Alpha & Omega Semiconductor Inc.
MOSFET P-CHANNEL 40V 40A TO252
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
AO3400A_101
AO3400A_101
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V SOT23
AO3415_108
AO3415_108
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V SOT23
AO3415L_107
AO3415L_107
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V SOT23
AO3401AL_101
AO3401AL_101
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3
AO3401L_101
AO3401L_101
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.2A SOT23-3
AOZ1282CI-2
AOZ1282CI-2
Alpha & Omega Semiconductor Inc.
IC REG BCK ADJ 0.6A 1MHZ SOT23-6
AOZ1282CI#A
AOZ1282CI#A
Alpha & Omega Semiconductor Inc.
IC REG BUCK ADJ 1.2A SOT23-6