Alpha & Omega Semiconductor Inc. AO3400

Manufacturer No:: AO3400
Manufacturer:: Alpha & Omega Semiconductor Inc.
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 30V 5.8A SOT23-3
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Product Introduction

Overview

The AO3400 is a 30V N-Channel MOSFET produced by Alpha & Omega Semiconductor Inc. This device combines advanced trench MOSFET technology with a low resistance package, providing extremely low R_DS(ON). It is suitable for use as a load switch or in PWM (Pulse Width Modulation) applications.

The AO3400 is designed to meet high power efficiency requirements in various high-volume applications, including portable electronics, power supplies, and more.

Key Specifications

Parameter	Typical	Maximum	Units
Drain-Source Voltage (V_DS)	-	30	V
Continuous Drain Current (I_D) at 25°C	-	5.8	A
R_DS(ON) at V_GS = 10V	-	28 mΩ	mΩ
R_DS(ON) at V_GS = 4.5V	-	33 mΩ	mΩ
R_DS(ON) at V_GS = 2.5V	-	52 mΩ	mΩ
Gate-Source Voltage (V_GS)	-	±12	V
Gate Threshold Voltage (V_GS(th))	0.65 - 1.45	1.45	V
Maximum Junction Temperature (T_J)	-	150	°C
Power Dissipation (P_D)	-	1.4	W
Input Capacitance (C_iss) at V_DS = 15V	-	630 pF	pF
Gate Charge (Q_g) at V_GS = 4.5V	-	7 nC	nC

Key Features

Advanced trench MOSFET technology for low R_DS(ON)
Low resistance package
Suitable for use as a load switch or in PWM applications
Maximum drain-source voltage of 30V
Maximum continuous drain current of 5.8A at 25°C
Low gate threshold voltage range of 0.65V to 1.45V
Maximum junction temperature of 150°C
High cell density DMOS trench technology
Available in SOT-23-3, TO-236-3, and SC-59 packages

Applications

Load switching
PWM (Pulse Width Modulation) applications
Portable electronics such as laptops and smartphones
Flat-panel TVs and monitors
Battery packs and power supplies
Portable media players and other consumer electronics

Q & A

What is the maximum drain-source voltage of the AO3400 MOSFET?
The maximum drain-source voltage (V_DS) of the AO3400 MOSFET is 30V.
What is the maximum continuous drain current of the AO3400 MOSFET at 25°C?
The maximum continuous drain current (I_D) of the AO3400 MOSFET at 25°C is 5.8A.
What are the typical R_DS(ON) values for the AO3400 MOSFET at different V_GS levels?
The typical R_DS(ON) values are less than 28mΩ at V_GS = 10V, less than 33mΩ at V_GS = 4.5V, and less than 52mΩ at V_GS = 2.5V.
What is the gate threshold voltage range of the AO3400 MOSFET?
The gate threshold voltage (V_GS(th)) range of the AO3400 MOSFET is from 0.65V to 1.45V.
What is the maximum junction temperature of the AO3400 MOSFET?
The maximum junction temperature (T_J) of the AO3400 MOSFET is 150°C.
In what packages is the AO3400 MOSFET available?
The AO3400 MOSFET is available in SOT-23-3, TO-236-3, and SC-59 packages.
What are some common applications of the AO3400 MOSFET?
The AO3400 MOSFET is commonly used in load switching, PWM applications, portable electronics, flat-panel TVs, battery packs, and power supplies.
What technology is used in the AO3400 MOSFET?
The AO3400 MOSFET uses advanced trench MOSFET technology with high cell density DMOS trench technology.
What is the maximum power dissipation of the AO3400 MOSFET?
The maximum power dissipation (P_D) of the AO3400 MOSFET is 1.4W.
What is the input capacitance of the AO3400 MOSFET at V_DS = 15V?
The input capacitance (C_iss) of the AO3400 MOSFET at V_DS = 15V is 630 pF.

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Quantity: 522

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Same Series

Part Number	AO3400	AO3420	AO3409	AO3402	AO3403	AO3406	AO3400A	AO3401	AO3460	AO3407	AO3404	AO3480
Manufacturer	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.
Product Status	Last Time Buy	Not For New Designs	Not For New Designs	Not For New Designs	Not For New Designs	Not For New Designs	Not For New Designs	Not For New Designs	Obsolete	Active	Obsolete	Obsolete
FET Type	N-Channel	N-Channel	P-Channel	N-Channel	P-Channel	N-Channel	N-Channel	P-Channel	N-Channel	P-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	20 V	30 V	30 V	30 V	30 V	30 V	30 V	60 V	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	5.8A (Ta)	6A (Ta)	2.6A (Ta)	4A (Ta)	2.6A (Ta)	3.6A (Ta)	5.7A (Ta)	4A (Ta)	650mA (Ta)	4.1A (Ta)	5A (Ta)	5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V	1.8V, 10V	4.5V, 10V	2.5V, 10V	2.5V, 10V	4.5V, 10V	2.5V, 10V	2.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V	2.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 5.8A, 10V	24mOhm @ 6A, 10V	130mOhm @ 2.6A, 10V	55mOhm @ 4A, 10V	115mOhm @ 2.6A, 10V	50mOhm @ 3.6A, 10V	26.5mOhm @ 5.7A, 10V	50mOhm @ 4A, 10V	1.7Ohm @ 650mA, 10V	52mOhm @ 4.1A, 10V	31mOhm @ 5A, 10V	26.5mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	1.45V @ 250µA	1V @ 1mA	3V @ 250µA	1.4V @ 250µA	1.4V @ 250µA	2.5V @ 250µA	1.5V @ 250µA	1.3V @ 250µA	2.5V @ 250µA	2.4V @ 250µA	2.4V @ 250µA	1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 4.5 V	8.8 nC @ 4.5 V	9 nC @ 10 V	4.34 nC @ 4.5 V	7.2 nC @ 10 V	5 nC @ 10 V	7 nC @ 4.5 V	14 nC @ 10 V	-	11 nC @ 10 V	6.3 nC @ 10 V	10 nC @ 4.5 V
Vgs (Max)	±12V	±12V	±20V	±12V	±12V	±20V	±12V	±12V	±20V	±20V	±20V	±12V
Input Capacitance (Ciss) (Max) @ Vds	630 pF @ 15 V	630 pF @ 10 V	370 pF @ 15 V	390 pF @ 15 V	315 pF @ 15 V	210 pF @ 15 V	630 pF @ 15 V	645 pF @ 15 V	27 pF @ 30 V	520 pF @ 15 V	310 pF @ 15 V	630 pF @ 15 V
FET Feature	-	-	-	-	-	-	-	-	-	-	-	-
Power Dissipation (Max)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)	1.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3
Package / Case	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant	3-SMD, SOT-23-3 Variant

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Rds On (Max) @ Id, Vgs:	28mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:	1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	630 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	1.4W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	3-SMD, SOT-23-3 Variant

Alpha & Omega Semiconductor Inc. AO3400

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

Same Series

AO3400

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