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AO3400
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Alpha & Omega Semiconductor Inc. AO3400

Manufacturer No:
AO3400
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The AO3400 is a 30V N-Channel MOSFET produced by Alpha & Omega Semiconductor Inc. This device combines advanced trench MOSFET technology with a low resistance package, providing extremely low RDS(ON). It is suitable for use as a load switch or in PWM (Pulse Width Modulation) applications.

The AO3400 is designed to meet high power efficiency requirements in various high-volume applications, including portable electronics, power supplies, and more.

Key Specifications

Parameter Typical Maximum Units
Drain-Source Voltage (VDS) - 30 V
Continuous Drain Current (ID) at 25°C - 5.8 A
RDS(ON) at VGS = 10V - 28 mΩ mΩ
RDS(ON) at VGS = 4.5V - 33 mΩ mΩ
RDS(ON) at VGS = 2.5V - 52 mΩ mΩ
Gate-Source Voltage (VGS) - ±12 V
Gate Threshold Voltage (VGS(th)) 0.65 - 1.45 1.45 V
Maximum Junction Temperature (TJ) - 150 °C
Power Dissipation (PD) - 1.4 W
Input Capacitance (Ciss) at VDS = 15V - 630 pF pF
Gate Charge (Qg) at VGS = 4.5V - 7 nC nC

Key Features

  • Advanced trench MOSFET technology for low RDS(ON)
  • Low resistance package
  • Suitable for use as a load switch or in PWM applications
  • Maximum drain-source voltage of 30V
  • Maximum continuous drain current of 5.8A at 25°C
  • Low gate threshold voltage range of 0.65V to 1.45V
  • Maximum junction temperature of 150°C
  • High cell density DMOS trench technology
  • Available in SOT-23-3, TO-236-3, and SC-59 packages

Applications

  • Load switching
  • PWM (Pulse Width Modulation) applications
  • Portable electronics such as laptops and smartphones
  • Flat-panel TVs and monitors
  • Battery packs and power supplies
  • Portable media players and other consumer electronics

Q & A

  1. What is the maximum drain-source voltage of the AO3400 MOSFET?

    The maximum drain-source voltage (VDS) of the AO3400 MOSFET is 30V.

  2. What is the maximum continuous drain current of the AO3400 MOSFET at 25°C?

    The maximum continuous drain current (ID) of the AO3400 MOSFET at 25°C is 5.8A.

  3. What are the typical RDS(ON) values for the AO3400 MOSFET at different VGS levels?

    The typical RDS(ON) values are less than 28mΩ at VGS = 10V, less than 33mΩ at VGS = 4.5V, and less than 52mΩ at VGS = 2.5V.

  4. What is the gate threshold voltage range of the AO3400 MOSFET?

    The gate threshold voltage (VGS(th)) range of the AO3400 MOSFET is from 0.65V to 1.45V.

  5. What is the maximum junction temperature of the AO3400 MOSFET?

    The maximum junction temperature (TJ) of the AO3400 MOSFET is 150°C.

  6. In what packages is the AO3400 MOSFET available?

    The AO3400 MOSFET is available in SOT-23-3, TO-236-3, and SC-59 packages.

  7. What are some common applications of the AO3400 MOSFET?

    The AO3400 MOSFET is commonly used in load switching, PWM applications, portable electronics, flat-panel TVs, battery packs, and power supplies.

  8. What technology is used in the AO3400 MOSFET?

    The AO3400 MOSFET uses advanced trench MOSFET technology with high cell density DMOS trench technology.

  9. What is the maximum power dissipation of the AO3400 MOSFET?

    The maximum power dissipation (PD) of the AO3400 MOSFET is 1.4W.

  10. What is the input capacitance of the AO3400 MOSFET at VDS = 15V?

    The input capacitance (Ciss) of the AO3400 MOSFET at VDS = 15V is 630 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:28mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:630 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
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Same Series
AO3400
AO3400
MOSFET N-CH 30V 5.8A SOT23-3

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Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Last Time Buy Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel P-Channel N-Channel P-Channel N-Channel N-Channel P-Channel N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 30 V 30 V 30 V 30 V 30 V 60 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) 6A (Ta) 2.6A (Ta) 4A (Ta) 2.6A (Ta) 3.6A (Ta) 5.7A (Ta) 4A (Ta) 650mA (Ta) 4.1A (Ta) 5A (Ta) 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 1.8V, 10V 4.5V, 10V 2.5V, 10V 2.5V, 10V 4.5V, 10V 2.5V, 10V 2.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 5.8A, 10V 24mOhm @ 6A, 10V 130mOhm @ 2.6A, 10V 55mOhm @ 4A, 10V 115mOhm @ 2.6A, 10V 50mOhm @ 3.6A, 10V 26.5mOhm @ 5.7A, 10V 50mOhm @ 4A, 10V 1.7Ohm @ 650mA, 10V 52mOhm @ 4.1A, 10V 31mOhm @ 5A, 10V 26.5mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 1.45V @ 250µA 1V @ 1mA 3V @ 250µA 1.4V @ 250µA 1.4V @ 250µA 2.5V @ 250µA 1.5V @ 250µA 1.3V @ 250µA 2.5V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 4.5 V 8.8 nC @ 4.5 V 9 nC @ 10 V 4.34 nC @ 4.5 V 7.2 nC @ 10 V 5 nC @ 10 V 7 nC @ 4.5 V 14 nC @ 10 V - 11 nC @ 10 V 6.3 nC @ 10 V 10 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±12V ±12V ±20V ±12V ±12V ±20V ±20V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 15 V 630 pF @ 10 V 370 pF @ 15 V 390 pF @ 15 V 315 pF @ 15 V 210 pF @ 15 V 630 pF @ 15 V 645 pF @ 15 V 27 pF @ 30 V 520 pF @ 15 V 310 pF @ 15 V 630 pF @ 15 V
FET Feature - - - - - - - - - - - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

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