AO3400A
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Alpha & Omega Semiconductor Inc. AO3400A

Manufacturer No:
AO3400A
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.7A SOT23-3L
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The AO3400A is a high-performance N-Channel enhancement mode MOSFET produced by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench technology and a high-density cell design to achieve ultra-low on-state resistance (RDS(ON)) and high efficiency. The AO3400A is packaged in a SOT-23-3 format, making it suitable for a variety of applications requiring compact and efficient power switching.

Key Specifications

Parameter Value Unit
Type of Transistor MOSFET
Type of Control Channel N-Channel
Maximum Drain-Source Voltage (Vds) 30 V
Maximum Gate-Source Voltage (Vgs) ±12 V
Gate-Threshold Voltage (Vgs(th)) 1.45 V
Maximum Drain Current (Id) 5.7 A
Maximum Junction Temperature (Tj) 150 °C
Maximum Power Dissipation (Pd) 1.4 W
On-State Resistance (Rds(on)) at Vgs=10V 26.5 mΩ
Total Gate Charge (Qg) 6 nC
Output Capacitance (Coss) 75 pF
Package SOT-23-3

Key Features

  • Advanced trench MOSFET technology for low RDS(ON) and high efficiency
  • High-density cell design for ultra-low on-state resistance
  • Low gate charge, enabling fast switching times
  • Operation with gate voltages as low as 2.5V
  • Avalanche rated and reliable and rugged construction
  • Halogen-free and Pb-free, meeting RoHS and Green Product requirements
  • Low leakage current and high junction temperature rating (-55°C to 150°C)

Applications

  • DC-DC conversion and power switching applications
  • Load switch and battery protection circuits
  • Power management in portable and desktop PCs
  • PWM (Pulse Width Modulation) applications
  • Charging circuits and other small power switching applications

Q & A

  1. What is the maximum drain-source voltage of the AO3400A MOSFET?

    The maximum drain-source voltage (Vds) of the AO3400A MOSFET is 30V

  2. What is the maximum drain current of the AO3400A MOSFET?

    The maximum drain current (Id) of the AO3400A MOSFET is 5.7A

  3. What is the typical on-state resistance (Rds(on)) of the AO3400A MOSFET at Vgs=10V?

    The typical on-state resistance (Rds(on)) of the AO3400A MOSFET at Vgs=10V is 26.5 mΩ

  4. What is the package type of the AO3400A MOSFET?

    The AO3400A MOSFET is packaged in a SOT-23-3 format

  5. What is the maximum junction temperature of the AO3400A MOSFET?

    The maximum junction temperature (Tj) of the AO3400A MOSFET is 150°C

  6. Is the AO3400A MOSFET RoHS and Green Product compliant?

    Yes, the AO3400A MOSFET is RoHS and Green Product compliant, and it is Pb-free and halogen-free

  7. What are some common applications of the AO3400A MOSFET?

    The AO3400A MOSFET is commonly used in DC-DC conversion, load switch, battery protection, PWM applications, and power management in portable and desktop PCs

  8. What is the gate charge of the AO3400A MOSFET?

    The total gate charge (Qg) of the AO3400A MOSFET is 6 nC

  9. What is the output capacitance (Coss) of the AO3400A MOSFET?

    The output capacitance (Coss) of the AO3400A MOSFET is 75 pF

  10. What is the operating temperature range of the AO3400A MOSFET?

    The operating temperature range of the AO3400A MOSFET is -55°C to 150°C

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:26.5mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:630 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
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Same Series
AO3400A
AO3400A
MOSFET N-CH 30V 5.7A SOT23-3L

Similar Products

Part Number AO3400A AO3407A AO3404A AO3401A AO3400
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Last Time Buy
FET Type N-Channel P-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta) 4.3A (Ta) 5.8A (Ta) 4A (Ta) 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 26.5mOhm @ 5.7A, 10V 48mOhm @ 4.3A, 10V 28mOhm @ 5.8A, 10V 44mOhm @ 4.3A, 10V 28mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA 3V @ 250µA 1.3V @ 250µA 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 4.5 V 16 nC @ 10 V 17 nC @ 10 V 12.2 nC @ 4.5 V 7 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±20V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 15 V 830 pF @ 15 V 820 pF @ 15 V 1200 pF @ 15 V 630 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

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