AO4407AL_102
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Alpha & Omega Semiconductor Inc. AO4407AL_102

Manufacturer No:
AO4407AL_102
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 12A 8SOIC
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The AO4407AL_102 is a P-Channel MOSFET produced by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench technology to offer excellent on-resistance (RDS(ON)) and ultra-low gate charge, making it suitable for various high-performance applications. The AO4407AL_102 is packaged in an 8-SOIC (Small Outline Integrated Circuit) package, which provides a compact and efficient solution for space-constrained designs.

Key Specifications

Parameter Value Units
Drain-Source Voltage (VDS) -30 V
Continuous Drain Current (ID) -12 A
Gate-Source Voltage (VGS) ±25 V
On-State Resistance (RDS(ON)) at VGS = -20V < 13
On-State Resistance (RDS(ON)) at VGS = -10V < 14
On-State Resistance (RDS(ON)) at VGS = -5V < 38
Power Dissipation (PD) 3.1 W
Gate Charge (Qg) 30 nC
Junction and Storage Temperature Range -55 to 150 °C
Package 8-SOIC (0.154, 3.90mm Width)

Key Features

  • Advanced trench technology for low RDS(ON)
  • Ultra-low gate charge
  • 100% UIS (Unclamped Inductive Switching) tested
  • 100% Rg (Gate Resistance) tested
  • RoHS and Halogen-Free compliant
  • Ideal for load switch and battery protection applications
  • Compact 8-SOIC package for space-efficient designs

Applications

  • Load switching
  • Battery protection
  • PWM (Pulse Width Modulation) applications
  • Power management in consumer electronics
  • Automotive and industrial power systems

Q & A

  1. What is the maximum drain-source voltage of the AO4407AL_102?

    The maximum drain-source voltage (VDS) is -30V.

  2. What is the continuous drain current rating of the AO4407AL_102?

    The continuous drain current (ID) is -12A.

  3. What is the gate-source voltage rating of the AO4407AL_102?

    The gate-source voltage (VGS) rating is ±25V.

  4. What is the on-state resistance (RDS(ON)) of the AO4407AL_102 at VGS = -20V?

    The on-state resistance (RDS(ON)) at VGS = -20V is less than 13mΩ.

  5. Is the AO4407AL_102 RoHS and Halogen-Free compliant?
  6. What are the typical applications of the AO4407AL_102?

    The AO4407AL_102 is typically used in load switching, battery protection, and PWM applications.

  7. What is the package type of the AO4407AL_102?

    The AO4407AL_102 is packaged in an 8-SOIC (Small Outline Integrated Circuit) package.

  8. What is the maximum junction and storage temperature range for the AO4407AL_102?

    The maximum junction and storage temperature range is -55 to 150°C.

  9. What is the power dissipation rating of the AO4407AL_102?

    The power dissipation (PD) rating is 3.1W.

  10. Is the AO4407AL_102 suitable for high-frequency applications?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 20V
Rds On (Max) @ Id, Vgs:11mOhm @ 12A, 20V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number AO4407AL_102 AO4407A_102
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 20V 6V, 20V
Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 20V 11mOhm @ 12A, 20V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V 2600 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta) 3.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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