English
AO3401L_101
  • Share:

Alpha & Omega Semiconductor Inc. AO3401L_101

Manufacturer No:
AO3401L_101
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AO3401L_101, produced by Alpha & Omega Semiconductor Inc., is a P-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed using advanced trench technology. This device is notable for its excellent on-resistance (RDS(ON)), low gate charge, and the ability to operate with gate voltages as low as 2.5V. It is suitable for various applications, including load switching and Pulse Width Modulation (PWM) circuits.

Key Specifications

ParameterTypicalMaximumUnits
Drain-Source Voltage (VDS)-30-30V
Drain Current (ID)-4.0-4.2A
On-Resistance (RDS(ON)) at VGS = -10V< 50< 50mΩ
On-Resistance (RDS(ON)) at VGS = -4.5V< 60< 65mΩ
On-Resistance (RDS(ON)) at VGS = -2.5V< 85< 120mΩ
Gate-Source Voltage (VGS)±12±12V
Power Dissipation (PD)1.41.4W
Junction and Storage Temperature Range-55 to 150-55 to 150°C
Maximum Junction-to-Ambient Thermal Resistance (RθJA)125125°C/W
Gate Charge (Qg)9.49.4nC
PackageSOT23SOT23

Key Features

  • Advanced trench technology for excellent RDS(ON) and low gate charge.
  • Operation with gate voltages as low as 2.5V.
  • High drain current capability of up to -4.0A.
  • Low on-resistance: < 50mΩ at VGS = -10V, < 60mΩ at VGS = -4.5V, and < 85mΩ at VGS = -2.5V.
  • Compact SOT23 package.
  • Wide junction and storage temperature range: -55°C to 150°C.

Applications

The AO3401L_101 is suitable for a variety of applications, including:

  • Load switching due to its high current handling and low on-resistance.
  • Pulse Width Modulation (PWM) circuits where low gate charge and efficient switching are crucial.
  • General power management and switching applications in consumer electronics, industrial control systems, and automotive systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the AO3401L_101?
    The maximum drain-source voltage (VDS) is -30V.
  2. What is the maximum continuous drain current (ID) of the AO3401L_101?
    The maximum continuous drain current (ID) is -4.0A.
  3. What are the typical on-resistance values for different gate-source voltages?
    The typical on-resistance values are < 50mΩ at VGS = -10V, < 60mΩ at VGS = -4.5V, and < 85mΩ at VGS = -2.5V.
  4. What is the gate-source voltage range for the AO3401L_101?
    The gate-source voltage range is ±12V.
  5. What is the maximum power dissipation of the AO3401L_101?
    The maximum power dissipation is 1.4W.
  6. What is the junction and storage temperature range of the AO3401L_101?
    The junction and storage temperature range is -55°C to 150°C.
  7. What package type is the AO3401L_101 available in?
    The AO3401L_101 is available in the SOT23 package.
  8. What are some typical applications for the AO3401L_101?
    Typical applications include load switching, PWM circuits, and general power management in various electronic systems.
  9. What is the maximum junction-to-ambient thermal resistance (RθJA) of the AO3401L_101?
    The maximum junction-to-ambient thermal resistance (RθJA) is 125°C/W.
  10. What is the gate charge (Qg) of the AO3401L_101?
    The gate charge (Qg) is 9.4 nC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:954 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
0 Remaining View Similar

In Stock

-
173

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number AO3401L_101 AO3401AL_101
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.2A, 10V 44mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 4.5 V 12.2 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 954 pF @ 15 V 1200 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

Related Product By Categories

IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
AON6512
AON6512
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 54A/150A 8DFN
AO3400A
AO3400A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5.7A SOT23-3L
AO3415A
AO3415A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 5A SOT23-3L
AO3401
AO3401
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4A SOT23-3
AO3400_101
AO3400_101
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5.8A SOT23
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
AOD4185L_DELTA
AOD4185L_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 40V TO252
AO3401L_101
AO3401L_101
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.2A SOT23-3
AO4407AL_102
AO4407AL_102
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
AOZ1282CI
AOZ1282CI
Alpha & Omega Semiconductor Inc.
IC REG BUCK ADJ 1.2A SOT23-6
AOZ1282CI-2
AOZ1282CI-2
Alpha & Omega Semiconductor Inc.
IC REG BCK ADJ 0.6A 1MHZ SOT23-6