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AO3401L_101
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Alpha & Omega Semiconductor Inc. AO3401L_101

Manufacturer No:
AO3401L_101
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4.2A SOT23-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The AO3401L_101, produced by Alpha & Omega Semiconductor Inc., is a P-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed using advanced trench technology. This device is notable for its excellent on-resistance (RDS(ON)), low gate charge, and the ability to operate with gate voltages as low as 2.5V. It is suitable for various applications, including load switching and Pulse Width Modulation (PWM) circuits.

Key Specifications

ParameterTypicalMaximumUnits
Drain-Source Voltage (VDS)-30-30V
Drain Current (ID)-4.0-4.2A
On-Resistance (RDS(ON)) at VGS = -10V< 50< 50mΩ
On-Resistance (RDS(ON)) at VGS = -4.5V< 60< 65mΩ
On-Resistance (RDS(ON)) at VGS = -2.5V< 85< 120mΩ
Gate-Source Voltage (VGS)±12±12V
Power Dissipation (PD)1.41.4W
Junction and Storage Temperature Range-55 to 150-55 to 150°C
Maximum Junction-to-Ambient Thermal Resistance (RθJA)125125°C/W
Gate Charge (Qg)9.49.4nC
PackageSOT23SOT23

Key Features

  • Advanced trench technology for excellent RDS(ON) and low gate charge.
  • Operation with gate voltages as low as 2.5V.
  • High drain current capability of up to -4.0A.
  • Low on-resistance: < 50mΩ at VGS = -10V, < 60mΩ at VGS = -4.5V, and < 85mΩ at VGS = -2.5V.
  • Compact SOT23 package.
  • Wide junction and storage temperature range: -55°C to 150°C.

Applications

The AO3401L_101 is suitable for a variety of applications, including:

  • Load switching due to its high current handling and low on-resistance.
  • Pulse Width Modulation (PWM) circuits where low gate charge and efficient switching are crucial.
  • General power management and switching applications in consumer electronics, industrial control systems, and automotive systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the AO3401L_101?
    The maximum drain-source voltage (VDS) is -30V.
  2. What is the maximum continuous drain current (ID) of the AO3401L_101?
    The maximum continuous drain current (ID) is -4.0A.
  3. What are the typical on-resistance values for different gate-source voltages?
    The typical on-resistance values are < 50mΩ at VGS = -10V, < 60mΩ at VGS = -4.5V, and < 85mΩ at VGS = -2.5V.
  4. What is the gate-source voltage range for the AO3401L_101?
    The gate-source voltage range is ±12V.
  5. What is the maximum power dissipation of the AO3401L_101?
    The maximum power dissipation is 1.4W.
  6. What is the junction and storage temperature range of the AO3401L_101?
    The junction and storage temperature range is -55°C to 150°C.
  7. What package type is the AO3401L_101 available in?
    The AO3401L_101 is available in the SOT23 package.
  8. What are some typical applications for the AO3401L_101?
    Typical applications include load switching, PWM circuits, and general power management in various electronic systems.
  9. What is the maximum junction-to-ambient thermal resistance (RθJA) of the AO3401L_101?
    The maximum junction-to-ambient thermal resistance (RθJA) is 125°C/W.
  10. What is the gate charge (Qg) of the AO3401L_101?
    The gate charge (Qg) is 9.4 nC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:954 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
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Similar Products

Part Number AO3401L_101 AO3401AL_101
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.2A, 10V 44mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 4.5 V 12.2 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 954 pF @ 15 V 1200 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

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