English
AO3401L_101
  • Share:

Alpha & Omega Semiconductor Inc. AO3401L_101

Manufacturer No:
AO3401L_101
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AO3401L_101, produced by Alpha & Omega Semiconductor Inc., is a P-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed using advanced trench technology. This device is notable for its excellent on-resistance (RDS(ON)), low gate charge, and the ability to operate with gate voltages as low as 2.5V. It is suitable for various applications, including load switching and Pulse Width Modulation (PWM) circuits.

Key Specifications

ParameterTypicalMaximumUnits
Drain-Source Voltage (VDS)-30-30V
Drain Current (ID)-4.0-4.2A
On-Resistance (RDS(ON)) at VGS = -10V< 50< 50mΩ
On-Resistance (RDS(ON)) at VGS = -4.5V< 60< 65mΩ
On-Resistance (RDS(ON)) at VGS = -2.5V< 85< 120mΩ
Gate-Source Voltage (VGS)±12±12V
Power Dissipation (PD)1.41.4W
Junction and Storage Temperature Range-55 to 150-55 to 150°C
Maximum Junction-to-Ambient Thermal Resistance (RθJA)125125°C/W
Gate Charge (Qg)9.49.4nC
PackageSOT23SOT23

Key Features

  • Advanced trench technology for excellent RDS(ON) and low gate charge.
  • Operation with gate voltages as low as 2.5V.
  • High drain current capability of up to -4.0A.
  • Low on-resistance: < 50mΩ at VGS = -10V, < 60mΩ at VGS = -4.5V, and < 85mΩ at VGS = -2.5V.
  • Compact SOT23 package.
  • Wide junction and storage temperature range: -55°C to 150°C.

Applications

The AO3401L_101 is suitable for a variety of applications, including:

  • Load switching due to its high current handling and low on-resistance.
  • Pulse Width Modulation (PWM) circuits where low gate charge and efficient switching are crucial.
  • General power management and switching applications in consumer electronics, industrial control systems, and automotive systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the AO3401L_101?
    The maximum drain-source voltage (VDS) is -30V.
  2. What is the maximum continuous drain current (ID) of the AO3401L_101?
    The maximum continuous drain current (ID) is -4.0A.
  3. What are the typical on-resistance values for different gate-source voltages?
    The typical on-resistance values are < 50mΩ at VGS = -10V, < 60mΩ at VGS = -4.5V, and < 85mΩ at VGS = -2.5V.
  4. What is the gate-source voltage range for the AO3401L_101?
    The gate-source voltage range is ±12V.
  5. What is the maximum power dissipation of the AO3401L_101?
    The maximum power dissipation is 1.4W.
  6. What is the junction and storage temperature range of the AO3401L_101?
    The junction and storage temperature range is -55°C to 150°C.
  7. What package type is the AO3401L_101 available in?
    The AO3401L_101 is available in the SOT23 package.
  8. What are some typical applications for the AO3401L_101?
    Typical applications include load switching, PWM circuits, and general power management in various electronic systems.
  9. What is the maximum junction-to-ambient thermal resistance (RθJA) of the AO3401L_101?
    The maximum junction-to-ambient thermal resistance (RθJA) is 125°C/W.
  10. What is the gate charge (Qg) of the AO3401L_101?
    The gate charge (Qg) is 9.4 nC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:954 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:3-SMD, SOT-23-3 Variant
0 Remaining View Similar

In Stock

-
173

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number AO3401L_101 AO3401AL_101
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.2A, 10V 44mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 4.5 V 12.2 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 954 pF @ 15 V 1200 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant 3-SMD, SOT-23-3 Variant

Related Product By Categories

FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

AOD4185
AOD4185
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 40V 40A TO252
AON6512
AON6512
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 54A/150A 8DFN
AO3400A
AO3400A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5.7A SOT23-3L
AO3415A
AO3415A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 5A SOT23-3L
AOD4185L_003
AOD4185L_003
Alpha & Omega Semiconductor Inc.
MOSFET P-CHANNEL 40V 40A TO252
AO3400
AO3400
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5.8A SOT23-3
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
AOD4185_DELTA
AOD4185_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 40V TO252
AO3415L_108
AO3415L_108
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 4A SOT23-3
AOZ1282CI-1
AOZ1282CI-1
Alpha & Omega Semiconductor Inc.
IC REG BUCK ADJ 600MA SOT23-6
AOZ1282CI
AOZ1282CI
Alpha & Omega Semiconductor Inc.
IC REG BUCK ADJ 1.2A SOT23-6
AOZ1282CI-2
AOZ1282CI-2
Alpha & Omega Semiconductor Inc.
IC REG BCK ADJ 0.6A 1MHZ SOT23-6