NTMFS5C645NLT1G
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onsemi NTMFS5C645NLT1G

Manufacturer No:
NTMFS5C645NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 22A/100A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS5C406NL is a power MOSFET from onsemi, designed for high-performance applications. This N-channel MOSFET features a small footprint of 5x6 mm, making it ideal for compact designs. It offers low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS40V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TJ = 25°C)ID362A
Continuous Drain Current (TA = 25°C)ID53A
Power Dissipation (TJ = 25°C)PD179W
Pulsed Drain Current (tp = 10 μs)IDM900A
Operating Junction and Storage Temperature RangeTJ, Tstg−55 to +175°C
Gate Threshold VoltageVGS(TH)1.2 - 2.0V
Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A)RDS(on)0.55 - 0.7

Key Features

  • Small Footprint (5x6 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low QG and Capacitance to Minimize Driver Losses
  • Pb-free and RoHS Compliant

Applications

The NTMFS5C406NL is suitable for a variety of high-power applications, including but not limited to:

  • Power Supplies and DC-DC Converters
  • Motor Control and Drives
  • Automotive Systems
  • Industrial Automation
  • Renewable Energy Systems

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS5C406NL?
    The maximum drain-to-source voltage is 40 V.
  2. What is the continuous drain current at 25°C junction temperature?
    The continuous drain current at 25°C junction temperature is 362 A.
  3. What is the gate threshold voltage range?
    The gate threshold voltage range is 1.2 to 2.0 V.
  4. What is the typical drain-to-source on resistance at VGS = 10 V and ID = 50 A?
    The typical drain-to-source on resistance is 0.7 mΩ.
  5. Is the NTMFS5C406NL Pb-free and RoHS compliant?
    Yes, the NTMFS5C406NL is Pb-free and RoHS compliant.
  6. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is −55 to +175°C.
  7. What is the pulsed drain current for a pulse width of 10 μs?
    The pulsed drain current for a pulse width of 10 μs is 900 A.
  8. What is the typical forward diode voltage at 25°C?
    The typical forward diode voltage at 25°C is 0.78 V.
  9. What is the reverse recovery time at 25°C?
    The reverse recovery time at 25°C is 93 ns.
  10. What is the package type of the NTMFS5C406NL?
    The package type is DFN5 (SO-8FL), CASE 506EZ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NTMFS5C645NLT3G
NTMFS5C645NLT3G
MOSFET N-CH 60V 22A/100A 5DFN

Similar Products

Part Number NTMFS5C645NLT1G NTMFS5C646NLT1G NTMFS5C645NLT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 100A (Tc) 19A (Ta) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 4.7mOhm @ 50A, 10V 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 33.7 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 50 V 2164 pF @ 25 V 2200 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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