Overview
The NJVNJD35N04T4G is an NPN Darlington power transistor produced by onsemi. This high-voltage power Darlington transistor is specifically designed for inductive applications, such as electronic ignition, switching regulators, and motor control. It is part of the NJD35N04 series and is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is lead-free and offers reliable performance at higher powers, designed for inductive loads with very low current requirements.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO | 350 | Vdc |
| Collector-Base Breakdown Voltage | VCBO | 700 | Vdc |
| Collector-Emitter Breakdown Voltage | VCES | 700 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current Continuous/Peak | IC/ICM | 4.0/8.0 | Adc |
| Base Current | IB | 0.5 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 45 | W |
| Derate above 25°C | 0.36 | W/°C | |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
| Thermal Resistance Junction-to-Case | RθJC | 2.78 | °C/W |
| Thermal Resistance Junction-to-Ambient | RθJA | 71.4 | °C/W |
Key Features
- Exceptional Safe Operating Area
- High VCE and high current gain
- NJV prefix for automotive and other applications requiring unique site and control change requirements
- AEC-Q101 qualified and PPAP capable
- Pb-free device
- Reliable performance at higher powers
- Designed for inductive loads
- Very low current requirements
Applications
- Internal combustion engine ignition control
- Switching regulators
- Motor controls
- Light ballast
- Photo flash
Q & A
- What is the NJVNJD35N04T4G transistor used for? The NJVNJD35N04T4G is used for inductive applications such as electronic ignition, switching regulators, and motor control.
- What are the key features of the NJVNJD35N04T4G transistor? Key features include exceptional safe operating area, high VCE and high current gain, AEC-Q101 qualification, and Pb-free construction.
- What is the maximum collector-emitter sustaining voltage of the NJVNJD35N04T4G? The maximum collector-emitter sustaining voltage is 350 Vdc.
- What is the continuous collector current rating of the NJVNJD35N04T4G? The continuous collector current rating is 4.0 Adc.
- What is the operating junction temperature range of the NJVNJD35N04T4G? The operating junction temperature range is -65 to +150 °C.
- Is the NJVNJD35N04T4G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the thermal resistance junction-to-case of the NJVNJD35N04T4G? The thermal resistance junction-to-case is 2.78 °C/W.
- What are the typical applications of the NJVNJD35N04T4G transistor? Typical applications include internal combustion engine ignition control, switching regulators, motor controls, light ballast, and photo flash.
- Is the NJVNJD35N04T4G a Pb-free device? Yes, the NJVNJD35N04T4G is a Pb-free device.
- What is the DC current gain of the NJVNJD35N04T4G transistor? The DC current gain (hFE) is typically 2000 to 3000.
