NJD35N04G
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onsemi NJD35N04G

Manufacturer No:
NJD35N04G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 350V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJD35N04G is an NPN Darlington power transistor produced by onsemi. This high-voltage power Darlington transistor is specifically designed for inductive applications such as electronic ignition, switching regulators, and motor control. It offers reliable performance at higher powers and is designed to handle inductive loads with very low current requirements. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Sustaining Voltage VCEO 350 Vdc
Collector-Base Breakdown Voltage VCBO 700 Vdc
Collector-Emitter Breakdown Voltage VCES 700 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current (Continuous/Peak) IC/ICM 4.0/8.0 Adc
Base Current IB 0.5 Adc
Total Power Dissipation @ TC = 25°C PD 45 W
Thermal Resistance (Junction-to-Case/Junction-to-Ambient) RJC/RJA 2.78/71.4 °C/W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C

Key Features

  • Exceptional Safe Operating Area
  • High VCE and High Current Gain (hFE: 300)
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free Devices
  • Reliable Performance at Higher Powers
  • Designed for Inductive Loads
  • Very Low Current Requirements

Applications

  • Internal Combustion Engine Ignition Control
  • Switching Regulators
  • Motor Controls
  • Light Ballast
  • Photo Flash

Q & A

  1. What is the NJD35N04G transistor used for?

    The NJD35N04G is used for inductive applications such as electronic ignition, switching regulators, and motor control.

  2. What are the key features of the NJD35N04G?

    Key features include exceptional safe operating area, high VCE and high current gain, AEC-Q101 qualification, and Pb-free construction.

  3. What is the maximum collector-emitter sustaining voltage of the NJD35N04G?

    The maximum collector-emitter sustaining voltage is 350 Vdc.

  4. What is the continuous collector current rating of the NJD35N04G?

    The continuous collector current rating is 4.0 Adc.

  5. What is the total power dissipation of the NJD35N04G at 25°C?

    The total power dissipation at 25°C is 45 W.

  6. Is the NJD35N04G suitable for automotive applications?
  7. What is the thermal resistance of the NJD35N04G from junction to case?

    The thermal resistance from junction to case is 2.78 °C/W.

  8. What is the operating and storage junction temperature range of the NJD35N04G?

    The operating and storage junction temperature range is -65 to +150 °C.

  9. Is the NJD35N04G a Pb-free device?
  10. What package types are available for the NJD35N04G?

    The NJD35N04G is available in DPAK (Pb-free) packages.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 20mA, 2A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2A, 2V
Power - Max:45 W
Frequency - Transition:90MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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