2PB709AR,115
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NXP USA Inc. 2PB709AR,115

Manufacturer No:
2PB709AR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SMT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2PB709AR,115 is a bipolar junction transistor (BJT) produced by NXP USA Inc. This transistor is part of the 2PB709A series and is characterized by its PNP configuration. However, it is important to note that this component is currently obsolete and no longer manufactured by NXP. Despite its obsolescence, it remains relevant for legacy systems and applications where compatibility is crucial.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor
Maximum Collector Current100 mA
Maximum Collector-Emitter Voltage45 V
Package TypeSC59 (SOT23)
StatusObsolete

Key Features

  • PNP configuration for specific circuit requirements.
  • Maximum collector current of 100 mA, suitable for low to moderate current applications.
  • Maximum collector-emitter voltage of 45 V, providing a robust voltage handling capability.
  • Compact SC59 (SOT23) package, ideal for space-constrained designs.

Applications

The 2PB709AR,115 transistor is suitable for various electronic circuits where a PNP BJT is required. These include:

  • Amplifier circuits: Due to its moderate current handling and voltage ratings, it can be used in small signal amplifiers.
  • Switching circuits: Its PNP configuration makes it useful in switching applications where a high current gain is not necessary.
  • Legacy systems: For systems that were designed with this transistor and require replacement parts for maintenance or repair.

Q & A

  1. What is the transistor type of the 2PB709AR,115?
    The 2PB709AR,115 is a PNP bipolar junction transistor.
  2. What is the maximum collector current of the 2PB709AR,115?
    The maximum collector current is 100 mA.
  3. What is the maximum collector-emitter voltage of the 2PB709AR,115?
    The maximum collector-emitter voltage is 45 V.
  4. What package type does the 2PB709AR,115 use?
    The package type is SC59 (SOT23).
  5. Is the 2PB709AR,115 still in production?
    No, the 2PB709AR,115 is obsolete and no longer manufactured.
  6. What are some common applications for the 2PB709AR,115?
    It is used in amplifier circuits, switching circuits, and legacy systems.
  7. Where can I find substitutes for the 2PB709AR,115?
    Substitutes can be found through distributors like Digi-Key, Mouser, and other electronic component suppliers.
  8. What is the HTSUS value for the 2PB709AR,115?
    The HTSUS value is 8541.21.0095.
  9. Why is the 2PB709AR,115 important despite being obsolete?
    It remains important for maintaining and repairing legacy systems that were designed with this component.
  10. How can I ensure compatibility when replacing the 2PB709AR,115?
    Ensure that the substitute transistor has similar specifications and characteristics to maintain system functionality.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:210 @ 2mA, 10V
Power - Max:250 mW
Frequency - Transition:70MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SMT3; MPAK
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In Stock

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Same Series
2PB709AQ,115
2PB709AQ,115
TRANS PNP 45V 0.1A SMT3
2PB709AS,115
2PB709AS,115
TRANS PNP 45V 0.1A SMT3

Similar Products

Part Number 2PB709AR,115 2PB709ARW,115 2PB709AS,115 2PB709AQ,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA, 10V 210 @ 2mA, 10V 290 @ 2mA, 10V 160 @ 2mA, 10V
Power - Max 250 mW 200 mW 250 mW 250 mW
Frequency - Transition 70MHz 70MHz 80MHz 60MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SMT3; MPAK SOT-323 SMT3; MPAK SMT3; MPAK

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