MMBT5551LT1G
  • Share:

onsemi MMBT5551LT1G

Manufacturer No:
MMBT5551LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 160V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT5551LT1G is a high-voltage NPN silicon transistor manufactured by onsemi. It is designed for general-purpose applications and is particularly notable for its high voltage and current handling capabilities. This transistor is available in a SOT-23 package, making it suitable for surface mount applications. It is AEC-Q101 qualified and PPAP capable, which makes it ideal for automotive and other applications requiring stringent quality and reliability standards.

Key Specifications

AttributeValue
PolarityNPN
TypeGeneral Purpose
Collector-Emitter Voltage (Vce)160 V
Collector Current (Ic)600 mA
Power Dissipation (Pc)225 mW
Collector-Base Voltage (Vcb)180 V
Collector-Emitter Saturation Voltage (Vce(sat))0.2 V
Emitter-Base Voltage (Veb)6 V
DC Current Gain (hFE) Min80
Collector Current Cutoff50 nA
ConfigurationSingle
Operating Temperature Range-55°C to +150°C
Moisture Sensitivity Level1
Package StyleSOT-23 (SC-59, TO-236)
Mounting MethodSurface Mount

Key Features

  • AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other high-reliability applications.
  • S Prefix for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  • High voltage and current handling capabilities.
  • High stability and reliability.

Applications

The MMBT5551LT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
  • General-purpose switching and amplification circuits.
  • High-voltage power supplies and regulators.
  • Audio and signal processing circuits where high voltage handling is necessary.

Q & A

  1. What is the polarity of the MMBT5551LT1G transistor?
    The MMBT5551LT1G is an NPN transistor.
  2. What is the maximum collector-emitter voltage of the MMBT5551LT1G?
    The maximum collector-emitter voltage is 160 V.
  3. What is the maximum collector current of the MMBT5551LT1G?
    The maximum collector current is 600 mA.
  4. What is the package type of the MMBT5551LT1G?
    The package type is SOT-23 (SC-59, TO-236).
  5. Is the MMBT5551LT1G RoHS compliant?
    Yes, the MMBT5551LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  6. What is the operating temperature range of the MMBT5551LT1G?
    The operating temperature range is -55°C to +150°C.
  7. What is the minimum DC current gain (hFE) of the MMBT5551LT1G?
    The minimum DC current gain (hFE) is 80.
  8. Is the MMBT5551LT1G suitable for automotive applications?
    Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive applications.
  9. What is the maximum power dissipation of the MMBT5551LT1G?
    The maximum power dissipation is 225 mW.
  10. What is the collector-emitter saturation voltage of the MMBT5551LT1G?
    The collector-emitter saturation voltage is 0.2 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:225 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.22
1,381

Please send RFQ , we will respond immediately.

Same Series
SMMBT5551LT1G
SMMBT5551LT1G
TRANS NPN 160V 0.6A SOT23-3
SMMBT5551LT3G
SMMBT5551LT3G
TRANS NPN 160V 0.6A SOT23-3
MMBT5551LT1G
MMBT5551LT1G
TRANS NPN 160V 0.6A SOT23-3
MMBT5550LT3G
MMBT5550LT3G
TRANS NPN 140V 0.6A SOT23-3
MMBT5551LT3G
MMBT5551LT3G
TRANS NPN 160V 0.6A SOT23-3
MMBT5550LT1
MMBT5550LT1
TRANS SS NPN 140V HV SOT23

Similar Products

Part Number MMBT5551LT1G MMBT5551LT3G MMBT5551LT1H MMBT5550LT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN NPN - NPN
Current - Collector (Ic) (Max) 600 mA 600 mA - 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V - 140 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA - 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA 100nA - 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 80 @ 10mA, 5V - 60 @ 10mA, 5V
Power - Max 225 mW 225 mW - 225 mW
Frequency - Transition - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) - SOT-23-3 (TO-236)

Related Product By Categories

MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
2PD601ARL,235
2PD601ARL,235
Nexperia USA Inc.
TRANS NPN 50V 0.1A TO236AB
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3
BC857BW/SNX
BC857BW/SNX
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD