MMBT5551LT1G
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onsemi MMBT5551LT1G

Manufacturer No:
MMBT5551LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 160V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT5551LT1G is a high-voltage NPN silicon transistor manufactured by onsemi. It is designed for general-purpose applications and is particularly notable for its high voltage and current handling capabilities. This transistor is available in a SOT-23 package, making it suitable for surface mount applications. It is AEC-Q101 qualified and PPAP capable, which makes it ideal for automotive and other applications requiring stringent quality and reliability standards.

Key Specifications

AttributeValue
PolarityNPN
TypeGeneral Purpose
Collector-Emitter Voltage (Vce)160 V
Collector Current (Ic)600 mA
Power Dissipation (Pc)225 mW
Collector-Base Voltage (Vcb)180 V
Collector-Emitter Saturation Voltage (Vce(sat))0.2 V
Emitter-Base Voltage (Veb)6 V
DC Current Gain (hFE) Min80
Collector Current Cutoff50 nA
ConfigurationSingle
Operating Temperature Range-55°C to +150°C
Moisture Sensitivity Level1
Package StyleSOT-23 (SC-59, TO-236)
Mounting MethodSurface Mount

Key Features

  • AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other high-reliability applications.
  • S Prefix for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  • High voltage and current handling capabilities.
  • High stability and reliability.

Applications

The MMBT5551LT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
  • General-purpose switching and amplification circuits.
  • High-voltage power supplies and regulators.
  • Audio and signal processing circuits where high voltage handling is necessary.

Q & A

  1. What is the polarity of the MMBT5551LT1G transistor?
    The MMBT5551LT1G is an NPN transistor.
  2. What is the maximum collector-emitter voltage of the MMBT5551LT1G?
    The maximum collector-emitter voltage is 160 V.
  3. What is the maximum collector current of the MMBT5551LT1G?
    The maximum collector current is 600 mA.
  4. What is the package type of the MMBT5551LT1G?
    The package type is SOT-23 (SC-59, TO-236).
  5. Is the MMBT5551LT1G RoHS compliant?
    Yes, the MMBT5551LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  6. What is the operating temperature range of the MMBT5551LT1G?
    The operating temperature range is -55°C to +150°C.
  7. What is the minimum DC current gain (hFE) of the MMBT5551LT1G?
    The minimum DC current gain (hFE) is 80.
  8. Is the MMBT5551LT1G suitable for automotive applications?
    Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive applications.
  9. What is the maximum power dissipation of the MMBT5551LT1G?
    The maximum power dissipation is 225 mW.
  10. What is the collector-emitter saturation voltage of the MMBT5551LT1G?
    The collector-emitter saturation voltage is 0.2 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:225 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBT5551LT1G MMBT5551LT3G MMBT5551LT1H MMBT5550LT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN NPN - NPN
Current - Collector (Ic) (Max) 600 mA 600 mA - 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V - 140 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA - 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA 100nA - 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 80 @ 10mA, 5V - 60 @ 10mA, 5V
Power - Max 225 mW 225 mW - 225 mW
Frequency - Transition - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) - SOT-23-3 (TO-236)

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