Overview
The MMBT5551LT1H is a high-voltage NPN silicon transistor produced by onsemi. This device is part of the MMBT5551 series, known for its high voltage handling capabilities and robust performance. It is designed to meet the stringent requirements of automotive and other applications that demand unique site and control change requirements. The MMBT5551LT1H is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. Additionally, it is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 160 | Vdc |
| Collector-Base Voltage | VCBO | 180 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Electrostatic Discharge (Human Body Model) | ESD | > 8000 | V |
| Electrostatic Discharge (Machine Model) | ESD | > 400 | V |
| Operating Temperature | TJ | -55°C to +150°C | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Total Device Dissipation (FR-5 Board @ TA = 25°C) | PD | 225 mW | |
| Derate Above 25°C | 1.8 mW/°C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- High voltage handling with collector-emitter voltage (VCEO) of 160 Vdc and collector-base voltage (VCBO) of 180 Vdc.
- Continuous collector current (IC) of 600 mA.
- High electrostatic discharge (ESD) tolerance with > 8000 V for human body model and > 400 V for machine model.
- Wide operating temperature range from -55°C to +150°C.
Applications
The MMBT5551LT1H is versatile and can be used in various applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Industrial control systems: Its high voltage and current handling capabilities make it ideal for industrial control circuits.
- Power supplies: It can be used in power supply circuits that require high voltage and reliability.
- General-purpose amplifiers and switches: Its robust performance makes it a good choice for general-purpose amplification and switching applications.
Q & A
- What is the collector-emitter voltage (VCEO) of the MMBT5551LT1H?
The collector-emitter voltage (VCEO) of the MMBT5551LT1H is 160 Vdc. - What is the maximum continuous collector current (IC) of the MMBT5551LT1H?
The maximum continuous collector current (IC) is 600 mA. - Is the MMBT5551LT1H RoHS compliant?
Yes, the MMBT5551LT1H is Pb-free, halogen-free, and RoHS compliant. - What is the operating temperature range of the MMBT5551LT1H?
The operating temperature range is from -55°C to +150°C. - What are the electrostatic discharge (ESD) ratings for the MMBT5551LT1H?
The ESD ratings are > 8000 V for the human body model and > 400 V for the machine model. - What package type is the MMBT5551LT1H available in?
The MMBT5551LT1H is available in the SOT-23 (TO-236) package. - Is the MMBT5551LT1H suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What is the thermal resistance, junction-to-ambient (RθJA) of the MMBT5551LT1H?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W. - What is the total device dissipation (PD) at TA = 25°C for the MMBT5551LT1H?
The total device dissipation (PD) at TA = 25°C is 225 mW. - How does the device derate above 25°C?
The device derates at 1.8 mW/°C above 25°C.
