NJVMJD32CT4G
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onsemi NJVMJD32CT4G

Manufacturer No:
NJVMJD32CT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 100V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJVMJD32CT4G is a PNP complementary power transistor produced by onsemi. This device is part of the MJD32 series, designed for general-purpose amplifier and low-speed switching applications. It is electrically similar to the popular TIP32 series and is available in a DPAK package, making it suitable for surface mount applications.

The NJVMJD32CT4G is lead-formed for surface mount applications and is available in tape and reel packaging, enhancing its usability in high-volume production environments. The device is Pb-free and RoHS compliant, ensuring environmental sustainability. Additionally, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.

Key Specifications

Characteristic Symbol Max Unit Value
Collector-Emitter Voltage VCEO Vdc 100
Collector-Base Voltage VCB Vdc 100
Emitter-Base Voltage VEB Vdc 5.0
Collector Current - Continuous IC Adc 3.0
Collector Current - Peak ICM Adc 5.0
Base Current IB Adc 1.0
Total Power Dissipation @ TC = 25°C PD W 15
Operating and Storage Junction Temperature Range TJ, Tstg °C -65 to +150
Thermal Resistance, Junction-to-Case RJC °C/W 8.3
Thermal Resistance, Junction-to-Ambient RJA °C/W 80
Lead Temperature for Soldering Purposes TL °C 260

Key Features

  • Lead-formed for surface mount applications in plastic sleeves.
  • Straight lead version in plastic sleeves (“1” suffix) and lead-formed version in 16 mm tape and reel (“T4” suffix).
  • Electrically similar to popular TIP31 and TIP32 series.
  • Epoxy meets UL 94, V−0 @ 0.125 in.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant.

Applications

The NJVMJD32CT4G is designed for various applications, including:

  • General-purpose amplifiers.
  • Low-speed switching applications.
  • Automotive systems due to its AEC-Q101 qualification.
  • Industrial control systems.
  • Consumer electronics requiring reliable and efficient power management.

Q & A

  1. What is the maximum collector-emitter voltage for the NJVMJD32CT4G?

    The maximum collector-emitter voltage (VCEO) is 100 Vdc.

  2. What is the continuous collector current rating for this transistor?

    The continuous collector current (IC) is 3.0 Adc.

  3. Is the NJVMJD32CT4G Pb-free and RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  4. What is the thermal resistance from junction to case for this transistor?

    The thermal resistance from junction to case (RJC) is 8.3 °C/W.

  5. What are the operating and storage junction temperature ranges for the NJVMJD32CT4G?

    The operating and storage junction temperature range is -65 to +150 °C.

  6. Is the NJVMJD32CT4G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  7. What package type is the NJVMJD32CT4G available in?

    The device is available in a DPAK package.

  8. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes (TL) is 260 °C.

  9. Is the NJVMJD32CT4G electrically similar to any other transistor series?

    Yes, it is electrically similar to the popular TIP31 and TIP32 series.

  10. What are the typical applications of the NJVMJD32CT4G?

    Typical applications include general-purpose amplifiers, low-speed switching applications, automotive systems, industrial control systems, and consumer electronics.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 1A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NJVMJD32CT4G NJVMJD32T4G NJVMJD42CT4G NJVMJD31CT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type PNP PNP PNP NPN
Current - Collector (Ic) (Max) 3 A 3 A 6 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 40 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.5V @ 600mA, 6A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 4V 10 @ 3A, 4V 30 @ 300mA, 4V 25 @ 1A, 4V
Power - Max 1.56 W 1.56 W 1.75 W 1.56 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK

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