Overview
The NJVMJD42CT4G is a PNP complementary power transistor produced by onsemi. It is part of the MJD42C series, designed for general-purpose amplifier and low-speed switching applications. This transistor is packaged in a DPAK (TO-252) case, which is lead-free and RoHS compliant. The NJV prefix indicates that it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
Characteristic | Symbol | Max Unit |
---|---|---|
Collector-Emitter Voltage | VCEO | 100 Vdc |
Collector-Base Voltage | VCB | 100 Vdc |
Emitter-Base Voltage | VEB | 5 Vdc |
Collector Current - Continuous | IC | 6 Adc |
Collector Current - Peak | ICM | 10 Adc |
Base Current | IB | 2 Adc |
Total Power Dissipation @ TC = 25°C | PD | 20 W (Derate above 25°C: 0.16 W/°C) |
Total Power Dissipation @ TA = 25°C | PD | 1.75 W (Derate above 25°C: 0.014 W/°C) |
Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 °C |
Thermal Resistance, Junction-to-Case | RJC | 6.25 °C/W |
Thermal Resistance, Junction-to-Ambient | RJA | 71.4 °C/W |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Straight lead version in plastic sleeves available (“1” suffix).
- Electrically similar to popular TIP41 and TIP42 series.
- Epoxy meets UL 94 V-0 @ 0.125 in.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-free and RoHS compliant.
Applications
The NJVMJD42CT4G is suitable for a variety of applications, including:
- General-purpose amplifiers.
- Low-speed switching applications.
- Automotive systems requiring AEC-Q101 qualification.
- Other applications needing high reliability and specific control change requirements.
Q & A
- What is the maximum collector-emitter voltage for the NJVMJD42CT4G?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is rated at 6 Adc.
- Is the NJVMJD42CT4G RoHS compliant?
- What is the thermal resistance from junction to case for this transistor?
The thermal resistance from junction to case (RJC) is 6.25 °C/W.
- What are the operating and storage temperature ranges for the NJVMJD42CT4G?
The operating and storage junction temperature range is −65 to +150 °C.
- Is the NJVMJD42CT4G suitable for automotive applications?
- What package type is the NJVMJD42CT4G available in?
The NJVMJD42CT4G is packaged in a DPAK (TO-252) case.
- What is the maximum base current for this transistor?
The maximum base current (IB) is 2 Adc.
- What is the total power dissipation at TC = 25°C for the NJVMJD42CT4G?
The total power dissipation at TC = 25°C is 20 W, with a derate of 0.16 W/°C above 25°C.
- How does the NJVMJD42CT4G compare to the TIP42 series?
The NJVMJD42CT4G is electrically similar to the popular TIP41 and TIP42 series.