NJVMJD41CT4G
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onsemi NJVMJD41CT4G

Manufacturer No:
NJVMJD41CT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJVMJD41CT4G is a bipolar junction transistor (BJT) with an NPN-type configuration, manufactured by ON Semiconductor. This transistor is designed for general-purpose amplifier and low-speed switching applications. It features a TO-252-3 (DPAK) package, making it suitable for surface mount applications. The NJVMJD41CT4G is electrically similar to the popular TIP41 series and is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding applications.

Key Specifications

ParameterValueUnit
Transistor TypeNPN
PackageTO-252-3, DPAK
Collector-Emitter Voltage (Vce)100Vdc
Collector-Base Voltage (Vcb)100Vdc
Emitter-Base Voltage (Veb)5Vdc
Collector Current (Ic) - Continuous6A
Collector Current (Ic) - Peak10A
Maximum Collector Power Dissipation (Pc)20W
Operating Junction Temperature (Tj)150°C
Transition Frequency (ft)3MHz
Forward Current Transfer Ratio (hFE) - Min15
Base-Emitter Saturation Voltage (Vbe(sat))1.5V @ 600mA, 6A

Key Features

  • Lead formed for surface mount applications in plastic sleeves.
  • Electrically similar to popular TIP41 and TIP42 series.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant.
  • High collector current and power dissipation capabilities.
  • Low noise and high current gain characteristics.

Applications

The NJVMJD41CT4G transistor is designed for various applications, including general-purpose amplifiers and low-speed switching circuits. It is particularly suitable for automotive systems due to its AEC-Q101 qualification. Other applications include power supplies, motor control circuits, and audio amplifiers where high current and reliability are required.

Q & A

  1. What is the maximum collector-emitter voltage of the NJVMJD41CT4G transistor?
    The maximum collector-emitter voltage (Vce) is 100 Vdc.
  2. What is the maximum collector current of the NJVMJD41CT4G transistor?
    The maximum continuous collector current (Ic) is 6 A, and the peak collector current is 10 A.
  3. What is the operating junction temperature of the NJVMJD41CT4G transistor?
    The maximum operating junction temperature (Tj) is 150°C.
  4. Is the NJVMJD41CT4G transistor RoHS compliant?
    Yes, the NJVMJD41CT4G transistor is Pb-free and RoHS compliant.
  5. What is the transition frequency of the NJVMJD41CT4G transistor?
    The transition frequency (ft) is 3 MHz.
  6. What is the minimum forward current transfer ratio (hFE) of the NJVMJD41CT4G transistor?
    The minimum forward current transfer ratio (hFE) is 15.
  7. What package type does the NJVMJD41CT4G transistor use?
    The NJVMJD41CT4G transistor uses a TO-252-3 (DPAK) package.
  8. Is the NJVMJD41CT4G transistor suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications).
  9. What is the maximum collector power dissipation of the NJVMJD41CT4G transistor?
    The maximum collector power dissipation (Pc) is 20 W).
  10. What are some common applications of the NJVMJD41CT4G transistor?
    Common applications include general-purpose amplifiers, low-speed switching circuits, power supplies, motor control circuits, and audio amplifiers).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):6 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 600mA, 6A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 4V
Power - Max:1.75 W
Frequency - Transition:3MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NJVMJD41CT4G NJVMJD42CT4G NJVMJB41CT4G NJVMJD31CT4G
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active Active
Transistor Type NPN PNP NPN NPN
Current - Collector (Ic) (Max) 6 A 6 A - 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V - 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 50µA 700µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 4V 30 @ 300mA, 4V 15 @ 3A, 4V 25 @ 1A, 4V
Power - Max 1.75 W 1.75 W 2 W 1.56 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK D²PAK DPAK

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