NJVMJD41CT4G
  • Share:

onsemi NJVMJD41CT4G

Manufacturer No:
NJVMJD41CT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJVMJD41CT4G is a bipolar junction transistor (BJT) with an NPN-type configuration, manufactured by ON Semiconductor. This transistor is designed for general-purpose amplifier and low-speed switching applications. It features a TO-252-3 (DPAK) package, making it suitable for surface mount applications. The NJVMJD41CT4G is electrically similar to the popular TIP41 series and is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding applications.

Key Specifications

ParameterValueUnit
Transistor TypeNPN
PackageTO-252-3, DPAK
Collector-Emitter Voltage (Vce)100Vdc
Collector-Base Voltage (Vcb)100Vdc
Emitter-Base Voltage (Veb)5Vdc
Collector Current (Ic) - Continuous6A
Collector Current (Ic) - Peak10A
Maximum Collector Power Dissipation (Pc)20W
Operating Junction Temperature (Tj)150°C
Transition Frequency (ft)3MHz
Forward Current Transfer Ratio (hFE) - Min15
Base-Emitter Saturation Voltage (Vbe(sat))1.5V @ 600mA, 6A

Key Features

  • Lead formed for surface mount applications in plastic sleeves.
  • Electrically similar to popular TIP41 and TIP42 series.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant.
  • High collector current and power dissipation capabilities.
  • Low noise and high current gain characteristics.

Applications

The NJVMJD41CT4G transistor is designed for various applications, including general-purpose amplifiers and low-speed switching circuits. It is particularly suitable for automotive systems due to its AEC-Q101 qualification. Other applications include power supplies, motor control circuits, and audio amplifiers where high current and reliability are required.

Q & A

  1. What is the maximum collector-emitter voltage of the NJVMJD41CT4G transistor?
    The maximum collector-emitter voltage (Vce) is 100 Vdc.
  2. What is the maximum collector current of the NJVMJD41CT4G transistor?
    The maximum continuous collector current (Ic) is 6 A, and the peak collector current is 10 A.
  3. What is the operating junction temperature of the NJVMJD41CT4G transistor?
    The maximum operating junction temperature (Tj) is 150°C.
  4. Is the NJVMJD41CT4G transistor RoHS compliant?
    Yes, the NJVMJD41CT4G transistor is Pb-free and RoHS compliant.
  5. What is the transition frequency of the NJVMJD41CT4G transistor?
    The transition frequency (ft) is 3 MHz.
  6. What is the minimum forward current transfer ratio (hFE) of the NJVMJD41CT4G transistor?
    The minimum forward current transfer ratio (hFE) is 15.
  7. What package type does the NJVMJD41CT4G transistor use?
    The NJVMJD41CT4G transistor uses a TO-252-3 (DPAK) package.
  8. Is the NJVMJD41CT4G transistor suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications).
  9. What is the maximum collector power dissipation of the NJVMJD41CT4G transistor?
    The maximum collector power dissipation (Pc) is 20 W).
  10. What are some common applications of the NJVMJD41CT4G transistor?
    Common applications include general-purpose amplifiers, low-speed switching circuits, power supplies, motor control circuits, and audio amplifiers).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):6 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 600mA, 6A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 4V
Power - Max:1.75 W
Frequency - Transition:3MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$0.41
598

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NJVMJD41CT4G NJVMJD42CT4G NJVMJB41CT4G NJVMJD31CT4G
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active Active
Transistor Type NPN PNP NPN NPN
Current - Collector (Ic) (Max) 6 A 6 A - 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V - 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 50µA 700µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 4V 30 @ 300mA, 4V 15 @ 3A, 4V 25 @ 1A, 4V
Power - Max 1.75 W 1.75 W 2 W 1.56 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK D²PAK DPAK

Related Product By Categories

MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
PBSS5350X,146
PBSS5350X,146
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BC857BW/ZLX
BC857BW/ZLX
Nexperia USA Inc.
TRANS SOT323
BC858B-QR
BC858B-QR
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5