Overview
The NJVMJD41CT4G is a bipolar junction transistor (BJT) with an NPN-type configuration, manufactured by ON Semiconductor. This transistor is designed for general-purpose amplifier and low-speed switching applications. It features a TO-252-3 (DPAK) package, making it suitable for surface mount applications. The NJVMJD41CT4G is electrically similar to the popular TIP41 series and is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Transistor Type | NPN | |
Package | TO-252-3, DPAK | |
Collector-Emitter Voltage (Vce) | 100 | Vdc |
Collector-Base Voltage (Vcb) | 100 | Vdc |
Emitter-Base Voltage (Veb) | 5 | Vdc |
Collector Current (Ic) - Continuous | 6 | A |
Collector Current (Ic) - Peak | 10 | A |
Maximum Collector Power Dissipation (Pc) | 20 | W |
Operating Junction Temperature (Tj) | 150 | °C |
Transition Frequency (ft) | 3 | MHz |
Forward Current Transfer Ratio (hFE) - Min | 15 | |
Base-Emitter Saturation Voltage (Vbe(sat)) | 1.5 | V @ 600mA, 6A |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Electrically similar to popular TIP41 and TIP42 series.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free and RoHS compliant.
- High collector current and power dissipation capabilities.
- Low noise and high current gain characteristics.
Applications
The NJVMJD41CT4G transistor is designed for various applications, including general-purpose amplifiers and low-speed switching circuits. It is particularly suitable for automotive systems due to its AEC-Q101 qualification. Other applications include power supplies, motor control circuits, and audio amplifiers where high current and reliability are required.
Q & A
- What is the maximum collector-emitter voltage of the NJVMJD41CT4G transistor?
The maximum collector-emitter voltage (Vce) is 100 Vdc. - What is the maximum collector current of the NJVMJD41CT4G transistor?
The maximum continuous collector current (Ic) is 6 A, and the peak collector current is 10 A. - What is the operating junction temperature of the NJVMJD41CT4G transistor?
The maximum operating junction temperature (Tj) is 150°C. - Is the NJVMJD41CT4G transistor RoHS compliant?
Yes, the NJVMJD41CT4G transistor is Pb-free and RoHS compliant. - What is the transition frequency of the NJVMJD41CT4G transistor?
The transition frequency (ft) is 3 MHz. - What is the minimum forward current transfer ratio (hFE) of the NJVMJD41CT4G transistor?
The minimum forward current transfer ratio (hFE) is 15. - What package type does the NJVMJD41CT4G transistor use?
The NJVMJD41CT4G transistor uses a TO-252-3 (DPAK) package. - Is the NJVMJD41CT4G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications). - What is the maximum collector power dissipation of the NJVMJD41CT4G transistor?
The maximum collector power dissipation (Pc) is 20 W). - What are some common applications of the NJVMJD41CT4G transistor?
Common applications include general-purpose amplifiers, low-speed switching circuits, power supplies, motor control circuits, and audio amplifiers).