Overview
The STD30NF06T4 is a high-performance N-channel power MOSFET developed by STMicroelectronics using their unique STripFET™ II process. This technology enhances the device's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The MOSFET is available in both through-hole IPAK (TO-251) and surface-mounting DPAK (TO-252) packages, making it versatile for various applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source Voltage (VDS) | 60 | V |
| Gate-source Voltage (VGS) | ±20 | V |
| Drain Current (continuous) at TC = 25°C | 28 | A |
| Drain Current (continuous) at TC = 100°C | 20 | A |
| Pulsed Drain Current (IDM) | 112 | A |
| Total Dissipation at TC = 25°C | 70 | W |
| Derating Factor | 0.47 | W/°C |
| Peak Diode Recovery Voltage Slope (dv/dt) | 10 | V/ns |
| Single Pulse Avalanche Energy (EAS) | 230 | mJ |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Max. Operating Junction Temperature (Tj) | 150 | °C |
| Static Drain-source On Resistance (RDS(on)) | 0.020 - 0.028 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
Key Features
- Low On-Resistance: Typical RDS(on) = 0.020 Ω, ensuring high efficiency in power applications.
- Exceptional dv/dt Capability: High peak diode recovery voltage slope, making it suitable for high-speed switching applications.
- 100% Avalanche Tested: Ensures rugged avalanche characteristics and reliability under harsh conditions.
- High Packing Density: STMicroelectronics’ unique STripFET™ II process enhances manufacturing reproducibility and reduces critical alignment steps.
- Versatile Packaging: Available in through-hole IPAK (TO-251) and surface-mounting DPAK (TO-252) packages.
Applications
- High Current, High Switching Speed Applications: Ideal for applications requiring rapid switching and high current handling.
- Motor Control: Suitable for motor control circuits due to its high current and switching speed capabilities.
- Audio Amplifiers: Can be used in high-power audio amplifiers where low on-resistance and high current are essential.
- Solenoid and Relay Drivers: Effective for driving solenoids and relays due to its high current and switching speed.
- DC-DC & DC-AC Converters: Used in high-efficiency isolated DC-DC converters and DC-AC conversion applications.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD30NF06T4?
The maximum drain-source voltage (VDS) is 60 V.
- What is the typical on-resistance (RDS(on)) of the STD30NF06T4?
The typical on-resistance (RDS(on)) is 0.020 Ω.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 28 A.
- What are the storage temperature limits for the STD30NF06T4?
The storage temperature range is -55°C to 175°C.
- What is the maximum operating junction temperature (Tj) for the STD30NF06T4?
The maximum operating junction temperature (Tj) is 150°C.
- What are the typical applications of the STD30NF06T4?
Typical applications include high current, high switching speed applications, motor control, audio amplifiers, solenoid and relay drivers, and DC-DC & DC-AC converters.
- What is the peak diode recovery voltage slope (dv/dt) of the STD30NF06T4?
The peak diode recovery voltage slope (dv/dt) is 10 V/ns.
- Is the STD30NF06T4 100% avalanche tested?
Yes, the STD30NF06T4 is 100% avalanche tested.
- What are the available package types for the STD30NF06T4?
The STD30NF06T4 is available in through-hole IPAK (TO-251) and surface-mounting DPAK (TO-252) packages.
- What is the single pulse avalanche energy (EAS) of the STD30NF06T4?
The single pulse avalanche energy (EAS) is 230 mJ.
