STD3NM60T4
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STMicroelectronics STD3NM60T4

Manufacturer No:
STD3NM60T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 3A DPAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STD3NM60T4 is an N-channel power MOSFET produced by STMicroelectronics. This device is part of the MDmesh technology family, known for its high performance and reliability. Although the STD3NM60T4 is currently obsolete and no longer manufactured, it was designed to offer high voltage and current handling capabilities, making it suitable for various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Continuous Drain Current)3 A
RDS(on) (On-Resistance)Typically 1.3 Ω
VGS(th) (Gate-Source Threshold Voltage)2-4 V
TJ (Junction Temperature)-55 to 150°C
PackageTO-220, TO-220FP, TO-247

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance (RDS(on)) of typically 1.3 Ω, which minimizes power losses.
  • Built-in back-to-back Zener diodes to enhance ESD capability.
  • MDmesh technology for improved performance and reliability.

Applications

The STD3NM60T4 MOSFET is designed for use in various power management and high-voltage applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial and automotive power systems.
  • High-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage of the STD3NM60T4?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current rating of the STD3NM60T4?
    The continuous drain current (ID) is 3 A.
  3. What is the typical on-resistance of the STD3NM60T4?
    The typical on-resistance (RDS(on)) is 1.3 Ω.
  4. Is the STD3NM60T4 still in production?
    No, the STD3NM60T4 is obsolete and no longer manufactured.
  5. What technology is used in the STD3NM60T4?
    The STD3NM60T4 uses MDmesh technology.
  6. What are the built-in protection features of the STD3NM60T4?
    The device includes built-in back-to-back Zener diodes to enhance ESD capability.
  7. What are the typical operating temperatures for the STD3NM60T4?
    The junction temperature (TJ) range is -55 to 150°C.
  8. What are some common applications for the STD3NM60T4?
    Common applications include power supplies, motor control systems, industrial and automotive power systems, and high-frequency switching applications.
  9. What packages is the STD3NM60T4 available in?
    The device is available in TO-220, TO-220FP, and TO-247 packages.
  10. Where can I find substitutes for the STD3NM60T4?
    Substitutes such as the SPD03N60C3ATMA1 from Infineon Technologies are available.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:324 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STD3NM60-1
STD3NM60-1
MOSFET N-CH 600V 3A IPAK

Similar Products

Part Number STD3NM60T4 STD5NM60T4 STD2NM60T4 STD3NM50T4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 550 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 5A (Tc) 2A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.5A, 10V 1Ohm @ 2.5A, 10V 3.2Ohm @ 1A, 10V 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 18 nC @ 10 V 8.4 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 324 pF @ 25 V 400 pF @ 25 V 160 pF @ 25 V 140 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 42W (Tc) 96W (Tc) 46W (Tc) 46W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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