SCT20N120H
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STMicroelectronics SCT20N120H

Manufacturer No:
SCT20N120H
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
SICFET N-CH 1200V 20A H2PAK-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SCT20N120H is a silicon carbide (SiC) Power MOSFET produced by STMicroelectronics. This device leverages the advanced properties of wide bandgap materials, resulting in unsurpassed on-resistance per unit area and excellent switching performance that is almost independent of temperature. The SiC material, combined with the proprietary HiP247 package, offers improved thermal capability within an industry-standard outline. This makes the SCT20N120H highly suitable for high-efficiency and high power density applications.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 1200 V
Gate-source voltage (VGS) -10 to 25 V
Drain current (continuous) at TC = 25 °C (ID) 20 A
Drain current (continuous) at TC = 100 °C (ID) 16 A
Drain current (pulsed) (IDM) 45 A
Total power dissipation at TC = 25 °C (PTOT) 175 W
Storage temperature range (Tstg) -55 to 200 °C
Operating junction temperature range (Tj) -55 to 200 °C
Static drain-source on-resistance (RDS(on)) at VGS = 20 V, ID = 10 A, TJ = 150 °C 189
Thermal resistance junction-case (Rthj-case) 1 °C/W
Thermal resistance junction-ambient (Rthj-amb) 40 °C/W

Key Features

  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (Tj = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
  • Slight variation of switching losses vs. temperature
  • Easy to drive
  • Meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”

Applications

  • Solar inverters
  • UPS (Uninterruptible Power Supplies)
  • Motor drives
  • High voltage DC-DC converters
  • Switch mode power supplies

Q & A

  1. What is the maximum drain-source voltage of the SCT20N120H?

    The maximum drain-source voltage (VDS) is 1200 V.

  2. What is the continuous drain current at 25 °C for the SCT20N120H?

    The continuous drain current (ID) at 25 °C is 20 A.

  3. What is the operating junction temperature range of the SCT20N120H?

    The operating junction temperature range (Tj) is -55 to 200 °C.

  4. What is the typical on-resistance of the SCT20N120H at TJ = 150 °C?

    The typical on-resistance (RDS(on)) at VGS = 20 V, ID = 10 A, and TJ = 150 °C is 189 mΩ.

  5. What are the key applications of the SCT20N120H?

    The key applications include solar inverters, UPS, motor drives, high voltage DC-DC converters, and switch mode power supplies.

  6. What is the thermal resistance junction-case of the SCT20N120H?

    The thermal resistance junction-case (Rthj-case) is 1 °C/W.

  7. Does the SCT20N120H meet any environmental standards?

    Yes, it meets ECOPACK standards, which are environmentally friendly and halogen-free.

  8. What is the package type of the SCT20N120H?

    The device is housed in the proprietary HiP247 package.

  9. What are the benefits of using silicon carbide material in the SCT20N120H?

    The silicon carbide material provides unsurpassed on-resistance per unit area, excellent switching performance almost independent of temperature, and high thermal capability.

  10. How does the SCT20N120H perform in terms of switching losses?

    The device has a slight variation of switching losses vs. temperature, ensuring stable performance across different temperatures.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):175W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number SCT20N120H SCT30N120H SCT10N120H SCT20N120
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 40A (Tc) 12A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V 100mOhm @ 20A, 20V 690mOhm @ 6A, 20V 290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA 3.5V @ 250µA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V 105 nC @ 20 V 22 nC @ 20 V 45 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V 1700 pF @ 400 V 290 pF @ 400 V 650 pF @ 400 V
FET Feature - - - -
Power Dissipation (Max) 175W (Tc) 270W (Tc) 150W (Tc) 175W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package H2Pak-2 H2Pak-2 H2Pak-2 HiP247™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3

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