Overview
The SCT20N120 is a silicon carbide (SiC) Power MOSFET produced by STMicroelectronics. This device leverages the advanced properties of wide bandgap materials, resulting in unsurpassed on-resistance per unit area and excellent switching performance that is almost independent of temperature. The SCT20N120 is housed in the proprietary HiP247 package, which enhances thermal capability while maintaining an industry-standard outline. This makes the device highly suitable for high-efficiency and high power density applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 1200 | V |
| Gate-source voltage (VGS) | -10 to 25 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 20 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 16 | A |
| Drain current (pulsed) (IDM) | 45 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 150 | W |
| Operating junction temperature range (Tj) | -55 to 175 | °C |
| On-state resistance (RDS(on)) at TJ = 150 °C | 189 mΩ | mΩ |
| Gate charge (Qg) | 45 nC | nC |
| Package | HiP247 |
Key Features
- Very tight variation of on-resistance vs. temperature
- Very high operating junction temperature capability (Tj = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- Solar inverters, UPS
- Motor drives
- High voltage DC-DC converters
- Switch mode power supplies
Q & A
- What is the drain-source voltage rating of the SCT20N120?
The drain-source voltage rating is 1200 V.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 20 A.
- What is the typical on-state resistance at TJ = 150 °C?
The typical on-state resistance at TJ = 150 °C is 189 mΩ.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 175 °C.
- What type of package is the SCT20N120 housed in?
The SCT20N120 is housed in the proprietary HiP247 package.
- What are some of the key applications for the SCT20N120?
Key applications include solar inverters, UPS, motor drives, high voltage DC-DC converters, and switch mode power supplies.
- What is the total power dissipation at TC = 25 °C?
The total power dissipation at TC = 25 °C is 150 W.
- What is the gate charge (Qg) for the SCT20N120?
The gate charge (Qg) is 45 nC.
- Does the SCT20N120 have a robust intrinsic body diode?
Yes, the SCT20N120 has a very fast and robust intrinsic body diode.
- Is the SCT20N120 suitable for high-efficiency applications?
Yes, the SCT20N120 is highly suitable for high-efficiency and high power density applications.
