SCT50N120
  • Share:

STMicroelectronics SCT50N120

Manufacturer No:
SCT50N120
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 1200V 65A HIP247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SCT50N120 is a silicon carbide (SiC) Power MOSFET produced by STMicroelectronics, leveraging the advanced properties of wide bandgap materials. This device offers unparalleled on-resistance per unit area and excellent switching performance that is nearly independent of temperature. The outstanding thermal properties of the SiC material enable the use of an industry-standard outline with significantly enhanced thermal capability, making it ideal for high-efficiency and high power density applications.

Key Specifications

Specification Value
Part Number SCT50N120
Manufacturer STMicroelectronics
Voltage Rating (Vds) 1200 V
Continuous Drain Current (Id) 65 A
Pulse Drain Current (Idm) 130 A
Operating Junction Temperature (Tj) -40°C to 200°C
Package TO-247-3
RoHS Compliance Ecopack2

Key Features

The SCT50N120 features several key advantages:

  • Tight variation of on-resistance vs. temperature: Ensures consistent performance across a wide temperature range.
  • High operating junction temperature capability: Up to 200°C, allowing for robust operation in demanding environments.
  • Fast and robust intrinsic body diode: Enhances overall device reliability and performance.
  • Low capacitance: Reduces switching losses and improves efficiency.

Applications

The SCT50N120 is recommended for various high-power and high-efficiency applications, including:

  • Industrial power conversion systems: Such as high voltage DC-DC converters and power supplies.
  • High power density systems: Where efficient thermal management and low switching losses are critical.

Q & A

  1. What is the voltage rating of the SCT50N120?

    The SCT50N120 has a voltage rating of 1200 V.

  2. What is the continuous drain current of the SCT50N120?

    The continuous drain current is 65 A.

  3. What is the maximum operating junction temperature of the SCT50N120?

    The maximum operating junction temperature is 200°C.

  4. What package type is the SCT50N120 available in?

    The SCT50N120 is available in the TO-247-3 package.

  5. Is the SCT50N120 RoHS compliant?

    Yes, the SCT50N120 is RoHS compliant with an Ecopack2 grade.

  6. What are the key features of the SCT50N120?

    The key features include tight variation of on-resistance vs. temperature, high operating junction temperature capability, fast and robust intrinsic body diode, and low capacitance.

  7. What applications is the SCT50N120 suitable for?

    The SCT50N120 is suitable for industrial power conversion systems, high voltage DC-DC converters, and other high power density applications.

  8. Where can I find EDA symbols, footprints, and 3D models for the SCT50N120?

    You can find these resources on the STMicroelectronics website.

  9. What is the pulse drain current (Idm) of the SCT50N120?

    The pulse drain current (Idm) is 130 A.

  10. Is the SCT50N120 available for purchase from distributors?

    Yes, the SCT50N120 is available for purchase from various distributors, including those listed on the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):318W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$41.25
2

Please send RFQ , we will respond immediately.

Similar Products

Part Number SCT50N120 SCT10N120 SCT20N120 SCT30N120
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 12A (Tc) 20A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V 690mOhm @ 6A, 20V 290mOhm @ 10A, 20V 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3V @ 1mA 3.5V @ 250µA 3.5V @ 1mA 2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V 22 nC @ 20 V 45 nC @ 20 V 105 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V 290 pF @ 400 V 650 pF @ 400 V 1700 pF @ 400 V
FET Feature - - - -
Power Dissipation (Max) 318W (Tc) 150W (Tc) 175W (Tc) 270W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package HiP247™ HiP247™ HiP247™ HiP247™
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB