SCT50N120
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STMicroelectronics SCT50N120

Manufacturer No:
SCT50N120
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 1200V 65A HIP247
Delivery:
Payment:
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Product Introduction

Overview

The SCT50N120 is a silicon carbide (SiC) Power MOSFET produced by STMicroelectronics, leveraging the advanced properties of wide bandgap materials. This device offers unparalleled on-resistance per unit area and excellent switching performance that is nearly independent of temperature. The outstanding thermal properties of the SiC material enable the use of an industry-standard outline with significantly enhanced thermal capability, making it ideal for high-efficiency and high power density applications.

Key Specifications

Specification Value
Part Number SCT50N120
Manufacturer STMicroelectronics
Voltage Rating (Vds) 1200 V
Continuous Drain Current (Id) 65 A
Pulse Drain Current (Idm) 130 A
Operating Junction Temperature (Tj) -40°C to 200°C
Package TO-247-3
RoHS Compliance Ecopack2

Key Features

The SCT50N120 features several key advantages:

  • Tight variation of on-resistance vs. temperature: Ensures consistent performance across a wide temperature range.
  • High operating junction temperature capability: Up to 200°C, allowing for robust operation in demanding environments.
  • Fast and robust intrinsic body diode: Enhances overall device reliability and performance.
  • Low capacitance: Reduces switching losses and improves efficiency.

Applications

The SCT50N120 is recommended for various high-power and high-efficiency applications, including:

  • Industrial power conversion systems: Such as high voltage DC-DC converters and power supplies.
  • High power density systems: Where efficient thermal management and low switching losses are critical.

Q & A

  1. What is the voltage rating of the SCT50N120?

    The SCT50N120 has a voltage rating of 1200 V.

  2. What is the continuous drain current of the SCT50N120?

    The continuous drain current is 65 A.

  3. What is the maximum operating junction temperature of the SCT50N120?

    The maximum operating junction temperature is 200°C.

  4. What package type is the SCT50N120 available in?

    The SCT50N120 is available in the TO-247-3 package.

  5. Is the SCT50N120 RoHS compliant?

    Yes, the SCT50N120 is RoHS compliant with an Ecopack2 grade.

  6. What are the key features of the SCT50N120?

    The key features include tight variation of on-resistance vs. temperature, high operating junction temperature capability, fast and robust intrinsic body diode, and low capacitance.

  7. What applications is the SCT50N120 suitable for?

    The SCT50N120 is suitable for industrial power conversion systems, high voltage DC-DC converters, and other high power density applications.

  8. Where can I find EDA symbols, footprints, and 3D models for the SCT50N120?

    You can find these resources on the STMicroelectronics website.

  9. What is the pulse drain current (Idm) of the SCT50N120?

    The pulse drain current (Idm) is 130 A.

  10. Is the SCT50N120 available for purchase from distributors?

    Yes, the SCT50N120 is available for purchase from various distributors, including those listed on the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):318W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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Similar Products

Part Number SCT50N120 SCT10N120 SCT20N120 SCT30N120
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 12A (Tc) 20A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V 690mOhm @ 6A, 20V 290mOhm @ 10A, 20V 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3V @ 1mA 3.5V @ 250µA 3.5V @ 1mA 2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V 22 nC @ 20 V 45 nC @ 20 V 105 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V 290 pF @ 400 V 650 pF @ 400 V 1700 pF @ 400 V
FET Feature - - - -
Power Dissipation (Max) 318W (Tc) 150W (Tc) 175W (Tc) 270W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package HiP247™ HiP247™ HiP247™ HiP247™
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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