Overview
The STMicroelectronics SCT30N120 is a high-performance Silicon Carbide (SiC) N-Channel Power MOSFET designed for high-efficiency and high-power density applications. This device leverages the advanced properties of wide bandgap materials, offering superior on-resistance and excellent switching performance. The SCT30N120 is housed in the proprietary HiP247™ package, which provides an industry-standard outline with enhanced thermal capabilities.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| Technology | Silicon Carbide (SiC) | |
| FET Type | N-Channel | |
| No. of Channels | 1 | |
| Drain-to-Source Voltage (Vdss) | 1200 | V |
| Drain Current (continuous) at TC = 25°C | 45 (die limited), 40 (package limited) | A |
| Drain Current (continuous) at TC = 100°C | 34 | A |
| Drain Current (pulsed) | 90 | A |
| Power Dissipation at TC = 25°C | 270 | W |
| Operating Temperature Range | -55°C to +200°C | |
| Package Style | HiP247™ | |
| Mounting Method | Through Hole | |
| Static Drain-Source On-Resistance (Rds(on)) at VGS = 20V, ID = 20A, TJ = 150°C | 90 mΩ | mΩ |
| Input Capacitance | 1700 pF | pF |
| Gate-Source Voltage Range | -10 to +25 V | V |
| Typical Gate Charge @ Vgs | 105 nC @ 20 V | nC |
Key Features
- Very Low Static Drain-Source On-Resistance: The SCT30N120 features very low on-resistance, especially for its 1200V rating, combined with excellent switching performance, making it ideal for efficient and compact systems.
- High Operating Junction Temperature Capability: The device can operate up to a junction temperature of 200°C, enhancing its reliability in high-temperature applications.
- Fast and Robust Intrinsic Body Diode: The MOSFET includes a fast and robust intrinsic body diode, which is beneficial for applications requiring high switching speeds and reliability.
- Low Capacitance: The device has low input, output, and reverse transfer capacitance, contributing to its high switching performance.
- Enhanced Thermal Capability: The HiP247™ package provides improved thermal properties, allowing for better heat dissipation and higher power density applications.
Applications
- Solar Inverters: The SCT30N120 is suitable for solar inverter applications due to its high efficiency and reliability.
- UPS (Uninterruptible Power Supplies): Its high power density and low on-resistance make it an excellent choice for UPS systems.
- Motor Drives: The device is used in motor drive applications where high efficiency and fast switching are required.
- High Voltage DC-DC Converters: The SCT30N120 is ideal for high voltage DC-DC converter applications due to its high voltage rating and low on-resistance.
- Switch Mode Power Supplies: It is also used in switch mode power supplies where high efficiency and reliability are critical).
Q & A
- What is the maximum drain-to-source voltage of the SCT30N120?
The maximum drain-to-source voltage (Vdss) of the SCT30N120 is 1200V.
- What is the continuous drain current rating of the SCT30N120 at 25°C?
The continuous drain current rating at 25°C is 45A (die limited) and 40A (package limited).
- What is the operating temperature range of the SCT30N120?
The operating temperature range is -55°C to +200°C.
- What package style does the SCT30N120 use?
The SCT30N120 is housed in the HiP247™ package.
- What are the typical applications of the SCT30N120?
The SCT30N120 is typically used in solar inverters, UPS, motor drives, high voltage DC-DC converters, and switch mode power supplies.
- What is the static drain-source on-resistance of the SCT30N120 at VGS = 20V and TJ = 150°C?
The static drain-source on-resistance (Rds(on)) at VGS = 20V, ID = 20A, and TJ = 150°C is 90 mΩ.
- What is the input capacitance of the SCT30N120?
The input capacitance is 1700 pF.
- What is the gate-source voltage range for the SCT30N120?
The gate-source voltage range is -10 to +25 V.
- What is the typical gate charge of the SCT30N120 at VGS = 20V?
The typical gate charge at VGS = 20V is 105 nC.
- How does the HiP247™ package enhance the performance of the SCT30N120?
The HiP247™ package provides improved thermal capability, allowing for better heat dissipation and higher power density applications).
