Overview
The MMBFJ211 is an N-Channel RF Amplifier produced by onsemi, designed for high-frequency (HF) and very high-frequency (VHF) applications, particularly in mixer and amplifier roles. This device is sourced from process 90, offering sufficient gain and low noise, making it suitable for sensitive receivers where process 50 is not adequate.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Gate Voltage (VDG) | 25 | V |
| Gate-Source Voltage (VGS) | -25 | V |
| Forward Gate Current (IGF) | 10 | mA |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to 150 | °C |
| Total Device Dissipation (PD) | 225 | mW |
| Derate Above 25°C | 1.8 | mW/°C |
| Thermal Resistance, Junction-to-Case (RθJC) | 125 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 556 | °C/W |
| Gate-Source Breakdown Voltage (V(BR)GSS) | -25 | V |
| Gate Reverse Current (IGSS) | -100 | pA |
| Gate-Source Cut-Off Voltage (VGS(off)) | -2.5 to -4.5 | V |
| Zero-Gate Voltage Drain Current (IDSS) | 7.0 to 20 | mA |
| Common Source Forward Transconductance (gfs) | 7000 to 12000 | μmhos |
| Common Source Output Conductance (goss) | -200 | μmhos |
Key Features
- High gain and low noise characteristics, making it suitable for sensitive receivers.
- Designed for HF/VHF mixer and amplifier applications.
- Sourced from process 90, providing improved performance over process 50.
- Available in TO-92 and SOT-23 packages, offering flexibility in design.
- Interchangeable source and drain leads.
- Low thermal resistance, ensuring efficient heat dissipation.
Applications
- HF/VHF mixer and amplifier circuits.
- Sensitive receivers requiring high gain and low noise.
- RF amplification in various communication systems.
- General-purpose RF applications where high performance is required.
Q & A
- What is the MMBFJ211 used for? The MMBFJ211 is used for HF/VHF mixer and amplifier applications, particularly in sensitive receivers.
- What are the package options for the MMBFJ211? The MMBFJ211 is available in TO-92 and SOT-23 packages.
- What is the maximum drain-gate voltage for the MMBFJ211? The maximum drain-gate voltage (VDG) is 25 V.
- What is the operating junction temperature range for the MMBFJ211? The operating and storage junction temperature range is -55 to 150 °C.
- What is the typical forward transconductance of the MMBFJ211? The common source forward transconductance (gfs) is typically between 7000 to 12000 μmhos.
- Can the source and drain leads be interchanged? Yes, the source and drain leads of the MMBFJ211 are interchangeable.
- What is the thermal resistance, junction-to-ambient (RθJA) for the MMBFJ211? The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W.
- What is the gate-source cut-off voltage range for the MMBFJ211? The gate-source cut-off voltage (VGS(off)) range is -2.5 to -4.5 V.
- What is the maximum total device dissipation for the MMBFJ211? The maximum total device dissipation (PD) is 225 mW.
- Is the MMBFJ211 suitable for use in life support systems or medical devices? No, the MMBFJ211 is not designed or intended for use as a critical component in life support systems or any FDA Class 3 medical devices.
