BSS84AKMB,315
  • Share:

Nexperia USA Inc. BSS84AKMB,315

Manufacturer No:
BSS84AKMB,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 230MA DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84AKMB,315 is a P-Channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's TrenchMOS™ series, known for its high performance and reliability. The BSS84AKMB,315 is packaged in a 3DFN (SOT883B) package, making it suitable for applications where space is limited. It is designed to operate with a drain to source voltage (Vdss) of 50V and a continuous drain current (Id) of 230mA, making it versatile for various power management and automotive applications.

Key Specifications

ParameterValue
ManufacturerNexperia USA Inc.
Part NumberBSS84AKMB,315
FET TypeP-Channel
Drain to Source Voltage (Vdss)50V
Continuous Drain Current (Id) @ 25°C230mA
On-Resistance (Rds On) @ Id, VgsNot specified for this exact model, but typically around 7.5 Ohm for similar models
Gate Threshold Voltage (Vgs(th)) @ IdNot specified for this exact model, but typically around 2.1V for similar models
Gate Charge (Qg) @ VgsNot specified for this exact model, but typically around 0.35nC for similar models
Input Capacitance (Ciss) @ VdsNot specified for this exact model, but typically around 36pF for similar models
Operating Temperature Range-55°C to 150°C (TJ)
Package / Case3DFN (SOT883B)
Mounting TypeSurface Mount

Key Features

  • Logic Level Gate: Compatible with standard MOSFET drive signals.
  • Low On-Resistance: Enhances efficiency in power management applications.
  • High Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for harsh environments.
  • Compact Package: 3DFN (SOT883B) package for space-saving designs.
  • AEC-Q101 Qualified: Ensures reliability and performance in automotive applications.
  • Lead Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The BSS84AKMB,315 is suitable for a variety of applications, including:

  • Power Management Systems: Ideal for voltage regulation, power switching, and other power management tasks.
  • Automotive Systems: Qualified to AEC-Q101 standards, making it reliable for use in automotive electronics.
  • Consumer Electronics: Used in devices requiring efficient power handling and compact design.

Q & A

  1. What is the drain to source voltage (Vdss) of the BSS84AKMB,315?
    The drain to source voltage (Vdss) is 50V.
  2. What is the continuous drain current (Id) of the BSS84AKMB,315 at 25°C?
    The continuous drain current (Id) is 230mA.
  3. What is the package type of the BSS84AKMB,315?
    The package type is 3DFN (SOT883B).
  4. Is the BSS84AKMB,315 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive reliability.
  5. What is the operating temperature range of the BSS84AKMB,315?
    The operating temperature range is from -55°C to 150°C (TJ).
  6. Is the BSS84AKMB,315 lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  7. What type of gate does the BSS84AKMB,315 have?
    The BSS84AKMB,315 has a logic level gate.
  8. What are some common applications of the BSS84AKMB,315?
    Common applications include power management systems, automotive systems, and consumer electronics.
  9. What is the mounting type of the BSS84AKMB,315?
    The mounting type is surface mount.
  10. Where can I find detailed specifications for the BSS84AKMB,315?
    Detailed specifications can be found on the official Nexperia website, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:36 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.35
507

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS84AKMB,315 BSS84AKM,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V 7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.35 nC @ 5 V 0.35 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 25 V 36 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 340mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 SOT-883
Package / Case 3-XFDFN SC-101, SOT-883

Related Product By Categories

NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
BZX84-C9V1/DG/B4R
BZX84-C9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.05V 250MW TO236AB
PEMD2,315
PEMD2,315
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
PMBT3906M,315
PMBT3906M,315
Nexperia USA Inc.
TRANS PNP 40V 0.2A SOT883
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
PBSS4021PT,215
PBSS4021PT,215
Nexperia USA Inc.
TRANS PNP 20V 3.5A TO236AB
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP
74HC11PW,118
74HC11PW,118
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14TSSOP
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN