FDY101PZ
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onsemi FDY101PZ

Manufacturer No:
FDY101PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 150MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY101PZ is a single P-Channel MOSFET designed and manufactured by onsemi. This device is fabricated using an advanced Power Trench process, which optimizes the on-resistance (RDS(ON)) at a gate-source voltage (VGS) of -2.5V. This MOSFET is suitable for various applications requiring low on-resistance and high efficiency.

Key Specifications

ParameterValue
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Drain Current (Id)-0.15 A
Power Dissipation (Pd)0.625 W
On-Resistance (RDS(ON)) @ VGS = -2.5VOptimized

Key Features

  • Advanced Power Trench process for low on-resistance
  • P-Channel configuration for specific application needs
  • High efficiency due to optimized RDS(ON) at VGS = -2.5V
  • Compact design suitable for space-constrained applications

Applications

The FDY101PZ is versatile and can be used in a variety of applications, including but not limited to:

  • Switching circuits
  • Power management systems
  • Audio and video equipment
  • Automotive electronics
  • Consumer electronics

Q & A

  1. What is the drain to source voltage (Vdss) of the FDY101PZ?
    The drain to source voltage (Vdss) of the FDY101PZ is 20 V.
  2. What is the maximum drain current (Id) of the FDY101PZ?
    The maximum drain current (Id) of the FDY101PZ is -0.15 A.
  3. What is the power dissipation (Pd) of the FDY101PZ?
    The power dissipation (Pd) of the FDY101PZ is 0.625 W.
  4. What process is used to fabricate the FDY101PZ?
    The FDY101PZ is fabricated using an advanced Power Trench process.
  5. Is the FDY101PZ still in production?
    No, the FDY101PZ is obsolete and no longer manufactured or stocked once current inventory is depleted.
  6. What type of FET is the FDY101PZ?
    The FDY101PZ is a P-Channel MOSFET.
  7. What is the typical application of the FDY101PZ?
    The FDY101PZ is typically used in switching circuits, power management systems, and other electronic devices requiring low on-resistance.
  8. Where can I find detailed specifications for the FDY101PZ?
    Detailed specifications for the FDY101PZ can be found in the datasheet available on the onsemi website or through distributors like Digi-Key.
  9. What is the significance of the optimized RDS(ON) at VGS = -2.5V?
    The optimized RDS(ON) at VGS = -2.5V enhances the efficiency and performance of the MOSFET in various applications.
  10. Can the FDY101PZ be used in automotive electronics?
    Yes, the FDY101PZ can be used in automotive electronics due to its robust specifications and reliability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
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Similar Products

Part Number FDY101PZ FDY102PZ FDY100PZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta) 830mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8Ohm @ 150mA, 4.5V 500mOhm @ 830mA, 4.5V 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V 3.1 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 10 V 135 pF @ 10 V 100 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

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