FDY101PZ
  • Share:

onsemi FDY101PZ

Manufacturer No:
FDY101PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 150MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY101PZ is a single P-Channel MOSFET designed and manufactured by onsemi. This device is fabricated using an advanced Power Trench process, which optimizes the on-resistance (RDS(ON)) at a gate-source voltage (VGS) of -2.5V. This MOSFET is suitable for various applications requiring low on-resistance and high efficiency.

Key Specifications

ParameterValue
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Drain Current (Id)-0.15 A
Power Dissipation (Pd)0.625 W
On-Resistance (RDS(ON)) @ VGS = -2.5VOptimized

Key Features

  • Advanced Power Trench process for low on-resistance
  • P-Channel configuration for specific application needs
  • High efficiency due to optimized RDS(ON) at VGS = -2.5V
  • Compact design suitable for space-constrained applications

Applications

The FDY101PZ is versatile and can be used in a variety of applications, including but not limited to:

  • Switching circuits
  • Power management systems
  • Audio and video equipment
  • Automotive electronics
  • Consumer electronics

Q & A

  1. What is the drain to source voltage (Vdss) of the FDY101PZ?
    The drain to source voltage (Vdss) of the FDY101PZ is 20 V.
  2. What is the maximum drain current (Id) of the FDY101PZ?
    The maximum drain current (Id) of the FDY101PZ is -0.15 A.
  3. What is the power dissipation (Pd) of the FDY101PZ?
    The power dissipation (Pd) of the FDY101PZ is 0.625 W.
  4. What process is used to fabricate the FDY101PZ?
    The FDY101PZ is fabricated using an advanced Power Trench process.
  5. Is the FDY101PZ still in production?
    No, the FDY101PZ is obsolete and no longer manufactured or stocked once current inventory is depleted.
  6. What type of FET is the FDY101PZ?
    The FDY101PZ is a P-Channel MOSFET.
  7. What is the typical application of the FDY101PZ?
    The FDY101PZ is typically used in switching circuits, power management systems, and other electronic devices requiring low on-resistance.
  8. Where can I find detailed specifications for the FDY101PZ?
    Detailed specifications for the FDY101PZ can be found in the datasheet available on the onsemi website or through distributors like Digi-Key.
  9. What is the significance of the optimized RDS(ON) at VGS = -2.5V?
    The optimized RDS(ON) at VGS = -2.5V enhances the efficiency and performance of the MOSFET in various applications.
  10. Can the FDY101PZ be used in automotive electronics?
    Yes, the FDY101PZ can be used in automotive electronics due to its robust specifications and reliability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
0 Remaining View Similar

In Stock

$0.43
2,095

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDY101PZ FDY102PZ FDY100PZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta) 830mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8Ohm @ 150mA, 4.5V 500mOhm @ 830mA, 4.5V 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V 3.1 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 10 V 135 pF @ 10 V 100 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

Related Product By Categories

FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK