FDY101PZ
  • Share:

onsemi FDY101PZ

Manufacturer No:
FDY101PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 150MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY101PZ is a single P-Channel MOSFET designed and manufactured by onsemi. This device is fabricated using an advanced Power Trench process, which optimizes the on-resistance (RDS(ON)) at a gate-source voltage (VGS) of -2.5V. This MOSFET is suitable for various applications requiring low on-resistance and high efficiency.

Key Specifications

ParameterValue
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Drain Current (Id)-0.15 A
Power Dissipation (Pd)0.625 W
On-Resistance (RDS(ON)) @ VGS = -2.5VOptimized

Key Features

  • Advanced Power Trench process for low on-resistance
  • P-Channel configuration for specific application needs
  • High efficiency due to optimized RDS(ON) at VGS = -2.5V
  • Compact design suitable for space-constrained applications

Applications

The FDY101PZ is versatile and can be used in a variety of applications, including but not limited to:

  • Switching circuits
  • Power management systems
  • Audio and video equipment
  • Automotive electronics
  • Consumer electronics

Q & A

  1. What is the drain to source voltage (Vdss) of the FDY101PZ?
    The drain to source voltage (Vdss) of the FDY101PZ is 20 V.
  2. What is the maximum drain current (Id) of the FDY101PZ?
    The maximum drain current (Id) of the FDY101PZ is -0.15 A.
  3. What is the power dissipation (Pd) of the FDY101PZ?
    The power dissipation (Pd) of the FDY101PZ is 0.625 W.
  4. What process is used to fabricate the FDY101PZ?
    The FDY101PZ is fabricated using an advanced Power Trench process.
  5. Is the FDY101PZ still in production?
    No, the FDY101PZ is obsolete and no longer manufactured or stocked once current inventory is depleted.
  6. What type of FET is the FDY101PZ?
    The FDY101PZ is a P-Channel MOSFET.
  7. What is the typical application of the FDY101PZ?
    The FDY101PZ is typically used in switching circuits, power management systems, and other electronic devices requiring low on-resistance.
  8. Where can I find detailed specifications for the FDY101PZ?
    Detailed specifications for the FDY101PZ can be found in the datasheet available on the onsemi website or through distributors like Digi-Key.
  9. What is the significance of the optimized RDS(ON) at VGS = -2.5V?
    The optimized RDS(ON) at VGS = -2.5V enhances the efficiency and performance of the MOSFET in various applications.
  10. Can the FDY101PZ be used in automotive electronics?
    Yes, the FDY101PZ can be used in automotive electronics due to its robust specifications and reliability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
0 Remaining View Similar

In Stock

$0.43
2,095

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDY101PZ FDY102PZ FDY100PZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta) 830mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8Ohm @ 150mA, 4.5V 500mOhm @ 830mA, 4.5V 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V 3.1 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 10 V 135 pF @ 10 V 100 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN