Overview
The STP34NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is known for its high efficiency and is suitable for demanding applications. It features a vertical structure combined with a strip layout, resulting in one of the world’s lowest on-resistance and gate charge. The STP34NM60N is available in TO-220 packages, making it versatile for various high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ± 25 | V |
| Continuous drain current (ID) at TC = 25 °C | 31.5 | A |
| Continuous drain current (ID) at TC = 100 °C | 20 | A |
| Pulsed drain current (IDM) | 126 | A |
| Total dissipation (PTOT) at TC = 25 °C | 250 | W |
| Static drain-source on-resistance (RDS(on)) | 0.105 | Ω |
| Gate threshold voltage (VGS(th)) | 2 - 4 | V |
| Input capacitance (Ciss) | 2722 | pF |
| Output capacitance (Coss) | 173 | pF |
| Reverse transfer capacitance (Crss) | 1.75 | pF |
| Total gate charge (Qg) | 84 | nC |
| Thermal resistance junction-case (Rthj-case) | 0.5 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High efficiency due to low on-resistance and gate charge
- MOSFET ruggedness for high dv/dt and di/dt
- Available in TO-220 packages for versatility in high-power applications
- ECOPACK® compliant for environmental sustainability
Applications
The STP34NM60N is suitable for various high-power switching applications, including:
- High efficiency converters
- Power supplies
- Motor control and drives
- Industrial and automotive systems requiring high reliability and efficiency
Q & A
- What is the maximum drain-source voltage (VDS) of the STP34NM60N?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 31.5 A.
- What is the static drain-source on-resistance (RDS(on))?
The static drain-source on-resistance (RDS(on)) is 0.105 Ω.
- What are the package options for the STP34NM60N?
The STP34NM60N is available in TO-220 packages.
- What is the maximum operating junction temperature (Tj) for the STP34NM60N?
The maximum operating junction temperature (Tj) is 150 °C.
- Is the STP34NM60N environmentally compliant?
Yes, the STP34NM60N is available in ECOPACK® compliant packages.
- What are some typical applications for the STP34NM60N?
Typical applications include high efficiency converters, power supplies, motor control, and industrial and automotive systems.
- What is the total gate charge (Qg) for the STP34NM60N?
The total gate charge (Qg) is 84 nC.
- What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.
- Is the STP34NM60N rugged against high dv/dt and di/dt?
Yes, the STP34NM60N has MOSFET ruggedness for high dv/dt and di/dt.
